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SIHF9Z24L

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF9Z24L-E3

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z24

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z24

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF9Z24

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z24

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z24

P-CHANNELPOWERMOSFETs

FEATURES ?LowerRDS(ON) ?Improvedinductiveruggedness ?Fastswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowerinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightmeperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF9Z24

POWERMOSFET

Description ThirdGenerationHEXFETsInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissi

IRF

International Rectifier

IRF9Z24

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-11A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.28Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF9Z24L

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細參數(shù)

  • 型號：

    SIHF9Z24L

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    Power MOSFET

供應(yīng)商型號品牌批號封裝庫存備注價格
VIS
23+
D2PAK
5000
原裝正品,假一罰十
 詢價
VBsemi
23+
TO263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
VBSEMI/臺灣微碧
23+
D2PAK
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
VB
21+
D2PAK
10000
原裝現(xiàn)貨假一罰十
 詢價
VISHAY/威世
2022+
TO-263
50000
原廠代理 終端免費提供樣品
 詢價
VBsemi
21+
TO263
10026
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
VBsemi
2201+
TO263
4822
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
VBsemi
24+
TO263
4822
詢價
VISHAY/威世
2022+
TO-263
30000
進口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價
VBsemi
24+
TO263
11000
假一賠百原裝正品價格優(yōu)勢實單可談
 詢價
更多SIHF9Z24L供應(yīng)商 更新時間2025-2-2 15:36:00

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