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SIHFBC40

iscN-Channel MOSFET Transistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance: RDS(ON)=1.2?(MAX) ?Enhancementmode: Vth=2to4V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SIHFBC40

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

KERSEMI

Kersemi Electronic Co., Ltd.

SIHFBC40

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFBC40A

iscN-Channel MOSFET Transistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance: RDS(ON)=1.2?(MAX) ?Enhancementmode: Vth=2to4V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SIHFBC40AS

Power MOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive ??requirement ?Improvedgate,avalancheanddynamicdV/dt ??ruggedness ?Fullycharacterizedcapacitanceandavalanche ??voltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance ??ple

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFBC40AS

iscN-Channel MOSFET Transistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance: RDS(ON)=1.2?(MAX) ?Enhancementmode: Vth=2to4V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SIHFBC40AS

N-Channel 650V (D-S) Power MOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Serverandtelecompowersupplies ?Switchmodepowersupplies(SMPS) ?Powerfactorcorrection

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

SIHFBC40AS

Power MOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalancheanddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceandavalanche voltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFBC40AS-E3

Power MOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive ??requirement ?Improvedgate,avalancheanddynamicdV/dt ??ruggedness ?Fullycharacterizedcapacitanceandavalanche ??voltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance ??ple

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFBC40ASTL

Power MOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive ??requirement ?Improvedgate,avalancheanddynamicdV/dt ??ruggedness ?Fullycharacterizedcapacitanceandavalanche ??voltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance ??ple

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFBC40ASTL-E3

Power MOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive ??requirement ?Improvedgate,avalancheanddynamicdV/dt ??ruggedness ?Fullycharacterizedcapacitanceandavalanche ??voltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance ??ple

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFBC40ASTR

Power MOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive ??requirement ?Improvedgate,avalancheanddynamicdV/dt ??ruggedness ?Fullycharacterizedcapacitanceandavalanche ??voltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance ??ple

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFBC40ASTR-E3

Power MOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive ??requirement ?Improvedgate,avalancheanddynamicdV/dt ??ruggedness ?Fullycharacterizedcapacitanceandavalanche ??voltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance ??ple

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFBC40-E3

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

KERSEMI

Kersemi Electronic Co., Ltd.

SIHFBC40L

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableoftheaccommodatingdiesizesuptoHEX-4.Itprovi

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFBC40L

iscN-Channel MOSFET Transistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance: RDS(ON)=1.2?(MAX) ?Enhancementmode: Vth=2to4V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SIHFBC40LC

Power MOSFET

PowerMOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalPowerMOSFETs.UtilizingthenewLCDMOStechnology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedriverequirements

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFBC40LC-E3

Power MOSFET

PowerMOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalPowerMOSFETs.UtilizingthenewLCDMOStechnology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedriverequirements

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFBC40L-E3

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableoftheaccommodatingdiesizesuptoHEX-4.Itprovi

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFBC40S

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableoftheaccommodatingdiesizesuptoHEX-4.Itprovi

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號:

    SIHFBC40

  • 制造商:

    VISHAY

  • 制造商全稱:

    Vishay Siliconix

  • 功能描述:

    Power MOSFET

供應(yīng)商型號品牌批號封裝庫存備注價格
VISHAY/威世
23+
TO-220
10000
公司只做原裝正品
詢價
VB
21+
TO-220AB
10000
原裝現(xiàn)貨假一罰十
詢價
VISHAY/威世
2022+
TO-220
50000
原廠代理 終端免費提供樣品
詢價
VISHAY/威世
2022+
TO-220
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
詢價
VISHAY/威世
20+
TO-220
7500
現(xiàn)貨很近!原廠很遠(yuǎn)!只做原裝
詢價
Vishay
24+
TO-TO-220
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
詢價
Vishay
18+
NA
3915
進(jìn)口原裝正品優(yōu)勢供應(yīng)
詢價
VISHAY/威世
22+
TO-263
20000
保證原裝正品,假一陪十
詢價
VISHAY/威世
23+
TO-263
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
詢價
apec
2023+
TO-220
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
更多SIHFBC40供應(yīng)商 更新時間2025-1-10 14:30:00