SIHFR010中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書

FEATURES

? Low drive current

? Surface-mount

? Fast switching

? Ease of paralleling

? Excellent temperature stability

? Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

DESCRIPTION

The power MOSFET technology is the key to Vishay’s

advanced line of power MOSFET transistors. The efficient

geometry and unique processing of this latest “State of the

Art” design achieves: very low on-state resistance

combined with high transconductance; superior reverse

energy and diode recovery dV/dt capability.

The power MOSFET transistors also feature all of the well

established advantages of MOSFET’S such as voltage

control, very fast switching, ease of paralleling and

temperature stability of the electrical parameters.

Surface mount packages enhance circuit performance by

reducing stray inductances and capacitance. The DPAK

(TO-252) surface-mount package brings the advantages of

power MOSFET’s to high volume applications where PC

Board surface mounting is desirable. The surface mount

option IRFR9012, SiHFR9012 is provided on 16 mm tape.

The straight lead option IRFU9012, SiHFU9012 of the device

is called the IPAK (TO-251).

They are well suited for applications where limited heat

dissipation is required such as, computers and peripherals,

telecommunication equipment, dc-to-dc converters, and a

wide range of consumer products.