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SIHFR224TL	文件：853.71 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
SIHFR224TLA	文件：3.37075 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR224TLA	文件：3.37389 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR224TL-E3	文件：853.71 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
SIHFR224TL-E3A	文件：3.37075 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR224TL-E3A	文件：3.37389 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFU224	文件：853.71 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
SIHFU224	文件：3.37389 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFU224	文件：3.37075 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFU224	文件：368.21 Kbytes Page：13 Pages	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR224,SiHFR224) ?Straightlead(IRFU224,SiHFU224) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
SIHFU224	文件：340.07 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
SIIRFR224PBF	文件：3.37075 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SLTS224B	文件：425.76 Kbytes Page：12 Pages	10-WPower-Over-EthernetIsolated	TI1Texas Instruments 德州儀器	TI1
SMTPB224	文件：55.13 Kbytes Page：5 Pages	TRISILTM DESCRIPTION TheSMTPBxxserieshasbeendesignedtoprotecttelecommunicationequipmentagainstlightningandtransientinducedbyACpowerlines. FEATURES BIDIRECTIONALCROWBARPROTECTION. BREAKDOWNVOLTAGERANGE:From62VTo270V. HOLDINGCURRENT:IH=150mAmin REPETITIVEPE	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團	STMICROELECTRONICS
SN224	文件：401.9 Kbytes Page：3 Pages	SFP2*2CAGECONN	VITALCONNVITALCONN ELECTRONICS HK LTD. 維達康電子維達康電子(香港)有限公司	VITALCONN
SR224	文件：98.66 Kbytes Page：2 Pages	224.70MHzOne-PortSAWResonator 224.70MHzOne-PortSAWResonator ?Idealfor224.70MHzTransmitters ?VeryLowInsertionLoss ?QuartzStability ?Rugged,Hermetic,LowProfileTO-39Package	VANLONGVanlong Technology Co., Ltd. 萬隆科技萬隆科技股份有限公司	VANLONG
SSW224	文件：162.86 Kbytes Page：3 Pages	DC-6GHZHIGHISOLATIONSPDTGAASMMICSWITCH ProductDescription StanfordMicrodevices’SSW-224isahighperfomanceGalliumArsenideFieldEffectTransistorMMICswitchhousedinalow-costsurface-mountable8-pinceramicpackage. ProductFeatures ?HighIsolation:40dBat2GHz,30dBat6GHz ?LowDCPowerConsumption ?BroadPerforman	STANFORD Stanford Microdevices	STANFORD
SSW-224	文件：162.86 Kbytes Page：3 Pages	DC-6GHZHIGHISOLATIONSPDTGAASMMICSWITCH ProductDescription StanfordMicrodevices’SSW-224isahighperfomanceGalliumArsenideFieldEffectTransistorMMICswitchhousedinalow-costsurface-mountable8-pinceramicpackage. ProductFeatures ?HighIsolation:40dBat2GHz,30dBat6GHz ?LowDCPowerConsumption ?BroadPerforman	STANFORD Stanford Microdevices	STANFORD
STV224X	文件：2.33522 Mbytes Page：86 Pages	I?CBUS-CONTROLLEDMULTISTANDARDSINGLECHIPTVPROCESSOR INTRODUCTION TheSTV224XH/228XH/223XHarefullybus-controlledICsforTVthatincludePIF,SIF,Luma,ChromaandDeflectionprocessingfunctions.Usedwithaverticalframebooster(TDA8174Afora90°chassis,STV9306fora110°chassis),theyallowmultistandard(BGDKIMNLL’,PAL/SECAM/NTSC)set	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團	STMICROELECTRONICS
STV224X	文件：3.0794 Mbytes Page：86 Pages	I?Cbus-controlledmultistandardsinglechipTVprocessor	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團	STMICROELECTRONICS

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詳細參數(shù)

型號：
SIHFR224TL
制造商：
VISHAY
制造商全稱：
Vishay Siliconix
功能描述：
Power MOSFET

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市亞泰盈科電子有限公司	SiHFR310	VISHAY		SOT-252	30216	提供BOM表配單TEL:0755-83759919QQ:2355705587杜S	詢價
中天科工半導(dǎo)體（深圳）有限公司	SiHFR310	Vishay	20+	TO-252	36900	原裝優(yōu)勢主營型號-可開原型號增稅票	詢價
深圳市安富世紀(jì)電子有限公司	SiHFR310	VISHAY/威世	23+	TO-252	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價
深圳市仟禧電子有限公司	SiHFR310	VISHAY/威世	22+	SOT-252	20000	保證原裝正品,假一陪十	詢價
深圳市國宇半導(dǎo)體科技有限公司	SiHFR310	VISHAY/威世	23+	TO-252	10000	公司只做原裝正品	詢價
深圳市威爾健半導(dǎo)體有限公司	SiHFR310	VISHAY/威世	23+	TO-252	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價
京海半導(dǎo)體(深圳)有限公司	SIHFR310	VB	21+	DPAK	10000	原裝現(xiàn)貨假一罰十	詢價
深圳廊盛科技有限公司	SiHFR310	VISHAY/威世	2022	TO-252	80000	原裝現(xiàn)貨,OEM渠道,歡迎咨詢	詢價
深圳市河鋒鑫科技有限公司	SIHFR310	VISHAY/威世通	TO-252	22+	6000	十年配單,只做原裝	詢價
深圳市維爾達電子有限公司	SiHFR310	sino	2023+	TO-252	80000	一級代理/分銷渠道價格優(yōu)勢十年芯程一路只做原裝正品	詢價

更多SIHFR224TL供應(yīng)商更新時間2024-12-24 14:00:00

詳細參數(shù)

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