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SIHFU120-E3

IRFR120

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFU120-E3

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

SIHFU120-E3

N-Channel 100-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

B120-E3

SurfaceMountSchottkyBarrierRectifier

FEATURES ?Lowprofilepackage ?Idealforautomatedplacement ?Guardringforovervoltageprotection ?Lowpowerlosses,highefficiency ?Lowforwardvoltagedrop ?Highsurgecapability ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260°C ?Materialcategorization:Fordefiniti

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

B120-E3

Surface-MountSchottkyBarrierRectifier

FEATURES ?Lowprofilepackage ?Idealforautomatedplacement ?Guardringforovervoltageprotection ?Lowpowerlosses,highefficiency ?Lowforwardvoltagedrop ?Highsurgecapability ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C ?Materialcategorization:fordefinit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

MUR120-E3

Lowforwardvoltagedrop

FEATURES ?Glasspassivatedchipjunction ?Ultrafastreverserecoverytime ?Lowforwardvoltagedrop ?Lowleakagecurrent ?Lowswitchinglosses,highefficiency ?Highforwardsurgecapability ?Solderdip260°C,40s ?ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC T

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFR120-E3

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

SIHFR120-E3

IRFR120

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHLD120-E3

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHLR120-E3

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
V
23+
TO-251
10000
公司只做原裝正品
 詢價(jià)
V
22+
TO-251
6000
十年配單,只做原裝
 詢價(jià)
V
22+
TO-251
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價(jià)
VISHAY/威世
22+
NA
163310
原裝正品現(xiàn)貨,可開13個(gè)點(diǎn)稅
 詢價(jià)
VISHAY/威世
NA
98000
詢價(jià)
VIS
23+
TO252D-PAK
10000
原裝正品,假一罰十
 詢價(jià)
VB
21+
TO252D-PAK
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
VISHAY/威世
22+
TO252
25000
只有原裝絕對(duì)原裝,支持BOM配單!
 詢價(jià)
VISHAY/威世
22+
TO-251
20000
保證原裝正品,假一陪十
 詢價(jià)
st
2023+
TO-251
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
 詢價(jià)
更多SIHFU120-E3供應(yīng)商 更新時(shí)間2025-2-4 10:06:00

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