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SIHH26N60E

Kelvin connection for reduced gate noise

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHH26N60EF

E Series Power MOSFET with Fast Body Diode

FEATURES ?Completelylead(Pb)-freedevice ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vish

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHH26N60EF_V01

E Series Power MOSFET with Fast Body Diode

FEATURES ?Completelylead(Pb)-freedevice ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vish

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHH26N60E_V01

E Series Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHH26N60EF

Reduced switching and conduction losses

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHH26N60E-T1-GE3

E Series Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP26N60L

iscN-ChannelMOSFETTransistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance: RDS(ON)=0.25?(MAX) ?Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP26N60L

PowerMOSFET

FEATURES ?Superfastbodydiodeeliminatestheneedfor externaldiodesinZVSapplications ?Lowergatechargeresultsinsimplerdrive requirements ?EnhanceddV/dtcapabilitiesofferimprovedruggedness ?Highergatevoltagethresholdoffersimprovednoise immunity ?Materialcategoriza

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP26N60L

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP26N60L

SMPSMOSFET

FeaturesandBenefits ?Superfastbodydiodeeliminatestheneedforexternal diodesinZVSapplications ?LowerGatechargeresultsinsimplerdriverequirements ?EnhanceddV/dtcapabilitiesofferimprovedruggedness ?HigherGatevoltagethresholdoffersimprovednoiseimmunity Applica

IRF

International Rectifier

IRFP26N60L

PowerMOSFET

PowerMOSFET FEATURES ?SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimplerDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP26N60LPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP26N60LPBF

HEXFETPowerMOSFET(VDSS=600V,RDS(on)typ.=210m廓,Trrtyp.=170ns,ID=26A)

FeaturesandBenefits ?Superfastbodydiodeeliminatestheneedforexternal diodesinZVSapplications ?LowerGatechargeresultsinsimplerdriverequirements ?EnhanceddV/dtcapabilitiesofferimprovedruggedness ?HigherGatevoltagethresholdoffersimprovednoiseimmunity ?Lead-

IRF

International Rectifier

IRFP26N60LPBF

PowerMOSFET

PowerMOSFET FEATURES ?SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimplerDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IXFH26N60

HiPerFETPowerMOSFETs

HiPerFET?PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalancheenergyandcurrentrated ?

IXYS

IXYS Corporation

IXFH26N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH26N60P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.27Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH26N60P

N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated

PolarHV?PowerMOSFET N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated Features ?FastRecoverydiode ?UnclampedInductiveSwitching(UIS)rated ?Internationalstandardpackages ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavi

IXYS

IXYS Corporation

IXFH26N60Q

HiPerFETTMPowerMOSFETsQ-Class

N-ChannelEnhancementMode AvalancheRated,Highdv/dt,LowQg Features ●Lowgatecharge ●Internationalstandardpackages ●EpoxymeetUL94V-0,flammabilityclassification ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Avalancheenergyandcurrentrated ●Fa

IXYS

IXYS Corporation

IXFH26N60Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
Vishay
18+
NA
3000
進(jìn)口原裝正品優(yōu)勢供應(yīng)QQ3171516190
 詢價
VISHAY/威世
23+
PAK8X8L
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
VISHAY(威世)
2112+
PowerPAK 8x8
105000
3000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
 詢價
VISHAY
20+
DFN
375
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價
VISHAY/威世
23+
PAK8X8L
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
VISHAY/威世
21+
PAK8X8L
10000
原裝現(xiàn)貨假一罰十
 詢價
Vishay Siliconix
22+
8PowerTDFN
9000
原廠渠道,現(xiàn)貨配單
 詢價
VISHAY/威世
2022
PAK8X8L
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
VISHAY/威世
23+
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
 詢價
VISHAY/威世
24+23+
PAK8X8L
12580
16年現(xiàn)貨庫存供應(yīng)商終端BOM表可配單提供樣品
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更多SIHH26N60E供應(yīng)商 更新時間2024-10-24 14:16:00

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