訂購數(shù)量 | 價(jià)格 |
---|---|
1+ |
首頁>SIHP12N65E-GE3>詳情
SIHP12N65E-GE3_VISHAY/威世科技_MOSFET 650V 392Ohm@10V 12A N-Ch E-SRS能創(chuàng)芯電子
- 詳細(xì)信息
- 規(guī)格書下載
產(chǎn)品屬性
- 類型
描述
- 型號:
SIHP12N65E-GE3
- 功能描述:
MOSFET 650V 392Ohm@10V 12A N-Ch E-SRS
- RoHS:
否
- 制造商:
Vishay/Siliconix
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
700 V
- 閘/源擊穿電壓:
20 V
- 漏極連續(xù)電流:
12 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.392 Ohms
- 配置:
Single
- 最大工作溫度:
+ 150 C
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
TO-220AB-3
- 封裝:
Bulk
供應(yīng)商
- 企業(yè):
深圳市能創(chuàng)芯電子科技有限公司
- 商鋪:
- 聯(lián)系人:
朱小姐/周先生
- 手機(jī):
13480198326
- 詢價(jià):
- 電話:
0755-82716865/82718239
- 傳真:
0755-83015146
- 地址:
深圳市福田區(qū)華強(qiáng)北街道華航社區(qū)紅荔路3011號上步工業(yè)區(qū)501棟4樓466房
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