| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=17A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HiPerFETPowerMOSFETsQ-Class HiPerFET?PowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,Highdv/dt,LowQg Features ?IXYSadvancedlowQgprocess ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?Fastswitching ?MoldingepoxiesmeetUL94V-0flammabili | IXYS IXYS Corporation | IXYS | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETsQ-Class HiPerFET?PowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,Highdv/dt,LowQg Features ?IXYSadvancedlowQgprocess ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?Fastswitching ?MoldingepoxiesmeetUL94V-0flammabili | IXYS IXYS Corporation | IXYS | ||
ESeriesPowerMOSFET FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Loweffectivecapacitance(Co(er)) ?Reducedswitchingandconductionlosses ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Serverandtelecompower | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
EFSeriesPowerMOSFETWithFastBodyDiode FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Loweffectivecapacitance(Co(er)) ?Reducedswitchingandconductionlosses ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Serverandtelecompower | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscN-ChannelMOSFETTransistor ·FEATURES ·Lowdrain-sourceon-resistance: RDS(ON)=0.29Ω(MAX) ·Enhancementmode: Vth=2.0to4.0V(VDS=10V,ID=0.25mA) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ·DESCRITION ·SwitchingVoltageRegulators | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
ESeriesPowerMOSFET FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ? | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
ESeriesPowerMOSFET FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Loweffectivecapacitance(Co(er)) ?Reducedswitchingandconductionlosses ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Serverandtelecompower | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
ESeriesPowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
ESeriesPowerMOSFET FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Loweffectivecapacitance(Co(er)) ?Reducedswitchingandconductionlosses ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Serverandtelecompower | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
EFSeriesPowerMOSFETWithFastBodyDiode | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
ESeriesPowerMOSFET FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ? | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
EFSeriesPowerMOSFETWithFastBodyDiode | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
ESeriesPowerMOSFET FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ? | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
infineon |
24+ |
TO263-7 |
14500 |
詢價(jià) | |||
INFINEON |
2023+ |
TO263-7 |
3645 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價(jià) | ||
INFINEON |
23+ |
TO263-7 |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | ||
INFINEON |
23+ |
TO263-7 |
7000 |
詢價(jià) | |||
IRCTT |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) |
相關(guān)規(guī)格書
更多- SIS530
- SIS5582
- SIS5598
- SIS630
- SIS6801
- SIXP220A
- SJA1000_N1
- SJA1000T
- SK34
- SK70706PE
- SK70740HE
- SK70742QE
- SK8060
- SK8085
- SL10326
- SL130
- SL1452
- SL1461S
- SL1613C
- SL1710
- SL1935C
- SL5018
- SL5066
- SL5501
- SL562
- SL606
- SL6270C
- SL6609A
- SL6619
- SL6654
- SL6800
- SL811HST
- SLA24C02D
- SLA24C04D
- SLA24C08D
- SLA24C16S
- SLA4061
- SLA5046
- SLA6023
- SLA7024M
- SLA7027MU
- SLC90E66-UF
- SM0230
- SM16LC05C
- SM16LC15C
相關(guān)庫存
更多- SIS5571
- SIS5595
- SIS620
- SIS645
- SIS961
- SJA1000
- SJA1000N
- SK12
- SK70704PE
- SK70720PE
- SK70741HE
- SK8050S
- SK-8060
- SK-8085
- SL10327
- SL1431
- SL1455
- SL1461SA
- SL162340
- SL1925E
- SL490B
- SL5020
- SL5500
- SL560C
- SL605
- SL6140
- SL6310
- SL6610
- SL6649-1
- SL6689-1
- SL811HS
- SL811HST-AC
- SLA24C02S
- SLA24C04S
- SLA24C08S
- SLA4031
- SLA5041
- SLA6022
- SLA7020M
- SLA7026M
- SLA7029M
- SLVU2.8-4
- SM05.TC
- SM16LC08C
- SM2965C40J
