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08N80C3

CoolMOSTMPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ISPP08N80C3

N-ChannelMOSFETTransistor

?DESCRIPTION ?Highpeakcurrentcapability ?Ultralowgatecharge ?Ultraloweffectivecapacitances ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.65? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPA08N80C3

CoolMOSTMPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA08N80C3

CoolMOSTMPowerTransistorFeaturesExtremedv/dtratedHighpeakcurrentcapability

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA08N80C3

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA08N80C3

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPI08N80C3

iscN-ChannelMOSFETTransistor

?DESCRIPTION ?Highpeakcurrentcapability ?Ultralowgatecharge ?Ultraloweffectivecapacitances ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.65? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPI08N80C3

CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnology

Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDECfortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP08N80C3

CoolMOSTMPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP08N80C3

N-ChannelMOSFETTransistor

?DESCRIPTION ?Highpeakcurrentcapability ?Ultralowgatecharge ?Ultraloweffectivecapacitances ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.65? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPP08N80C3

CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP08N80C3

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
INFINEON
23+
8000
只做原裝現(xiàn)貨
詢價(jià)
INFINEON
23+
7000
詢價(jià)
INFINEON
1809+
SMD
1675
就找我吧!--邀您體驗(yàn)愉快問購元件!
詢價(jià)
Infineon Technologies
22+
9000
原廠渠道,現(xiàn)貨配單
詢價(jià)
Infineon
24+
TO220-3
17900
MOSFET管
詢價(jià)
Infineon Technologies
24+
原裝
5000
原裝正品,提供BOM配單服務(wù)
詢價(jià)
更多SIPC08N80C3ZJ供應(yīng)商 更新時(shí)間2025-1-11 15:00:00