訂購數(shù)量 | 價(jià)格 |
---|---|
1+ |
SIR640DP-T1-GE3_VISHAY/威世科技_MOSFET 40V 1.7mOhm@10V 60A N-Ch MV T-FET兆威電子01部
- 詳細(xì)信息
- 規(guī)格書下載
產(chǎn)品屬性
- 類型
描述
- 型號(hào):
SIR640DP-T1-GE3
- 功能描述:
MOSFET 40V 1.7mOhm@10V 60A N-Ch MV T-FET
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商
- 企業(yè):
深圳兆威電子有限公司
- 商鋪:
- 聯(lián)系人:
顏小姐 /李先生
- 手機(jī):
13823576937
- 詢價(jià):
- 電話:
0755- 82532883
- 傳真:
0755-83203002
- 地址:
廣東深圳龍崗區(qū)坂田街道中興路11號(hào)城市山海中心C棟606-608
相近型號(hào)
- SIR640ADP-T1-GE3
- SIR640ADPT1GE3
- SIR644DP
- SIR640ADP-T1-E3
- SIR644DP-GE3
- SIR640ADP-GE3
- SIR644DP-T1-E3
- SIR640ADP
- SIR644DPT1GE3
- SIR638DP-T1-RE3
- SIR644DP-T1-GE3
- SIR638DP-T1-GE3
- SIR638DPT1GE3
- SIR638DP-T1-E3
- SIR646DP-T1-E3
- SIR638DP
- SIR646DPT1GE3
- SIR638ADP-T1-RE3
- SIR646DP-T1-GE3
- SIR638ADP-T1-GE3
- SIR638ADP-T1-E3
- SIR662DP
- SIR638ADP
- SIR662DP0T10GE3
- SIR632DP-T1-RE3-H
- SIR662DPFET
- SIR632DP-T1-RE3
- SIR662DPFETIGBTIC
- SIR632DPT1RE3
- SIR632DP-T1-GE3
- SIR632DP-T1-E3
- SIR662DP-T1-E3
- SIR626LDP-T1-RE3
- SIR662DPT1GE3
- SIR626LDP-T1-GE3
- SIR662DP-T1-GE3
- SIR626DP-T1-RE3
- SIR662DP-T1-GE3IC
- SIR626DPT1RE3
- SIR662DP-T1-GE3-JSM
- SIR626DP-T1-RE
- SIR626DP-T1-GE3
- SIR662DP-T1-GE3-VB
- SIR626DP-T1-E3
- SIR662DP-T1-RE3
- SIR626DP
- SIR662DP-TI-GE3
- SIR626ADP-T1-RE3
- SIR664DP
- SIR626ADP-T1-GE3