訂購數(shù)量 | 價格 |
---|---|
1+ |
SIR662DP-T1-GE3_VISHAY/威世科技_MOSFET 60V 2.7mOhm@10V 60A N-Ch MV T-FET納艾斯
- 詳細信息
- 規(guī)格書下載
產(chǎn)品屬性
- 類型
描述
- 型號:
SIR662DP-T1-GE3
- 功能描述:
MOSFET 60V 2.7mOhm@10V 60A N-Ch MV T-FET
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商
- 企業(yè):
深圳市納艾斯科技有限公司
- 商鋪:
- 聯(lián)系人:
肖小姐
- 手機:
13117514091
- 詢價:
- 電話:
0755-/82781136/2707495
- 傳真:
0755-82707495
- 地址:
深圳市福田區(qū)華強北路賽格大廈5803A
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