訂購數(shù)量 | 價格 |
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首頁>SIR862DP-T1-GE3>芯片詳情
SIR862DP-T1-GE3_VISHAY/威世科技_MOSFET N-CH 25V 8-SOIC坤融電子
- 詳細信息
- 規(guī)格書下載
產品屬性
- 類型
描述
- 型號:
SIR862DP-T1-GE3
- 功能描述:
MOSFET N-CH 25V 8-SOIC
- RoHS:
是
- 類別:
分離式半導體產品 >> FET - 單
- 系列:
TrenchFET®
- 標準包裝:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金屬氧化物 FET
- 特點:
邏輯電平門
- 漏極至源極電壓(Vdss):
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C:
18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫歐 @ 9A,10V Id 時的
- Vgs(th)(最大):
4V @ 250µA 閘電荷(Qg) @
- Vgs:
72nC @ 10V 輸入電容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3 整包
- 供應商設備封裝:
TO-220FP
- 包裝:
管件
供應商
- 企業(yè):
深圳市坤融電子科技有限公司
- 商鋪:
- 聯(lián)系人:
黃先生
- 手機:
13510287235
- 詢價:
- 電話:
0755-23990975
- 地址:
深圳市福田區(qū)華強北街道華航社區(qū)華富路1006號航都大廈10層I
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