訂購數量 | 價格 |
---|---|
1+ |
SIR876DP-T1-GE3_VISHAY/威世科技_MOSFET 100V 40A N-CH MOSFET躍創(chuàng)芯
- 詳細信息
- 規(guī)格書下載
產品屬性
- 類型
描述
- 型號:
SIR876DP-T1-GE3
- 功能描述:
MOSFET 100V 40A N-CH MOSFET
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商
- 企業(yè):
深圳市躍創(chuàng)芯科技有限公司
- 商鋪:
- 聯系人:
李小姐
- 手機:
19065122659
- 詢價:
- 電話:
13510546959
- 地址:
深圳市福田區(qū)福田街道福山社區(qū)彩田路2010號中深花園B1008M15
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