訂購數(shù)量 | 價格 |
---|---|
1+ |
首頁>SIS424DN-T1-GE3>芯片詳情
SIS424DN-T1-GE3_VISHAY/威世科技_MOSFET 20V 35A 39W博通航睿技術(shù)
- 詳細(xì)信息
- 規(guī)格書下載
產(chǎn)品屬性
- 類型
描述
- 型號:
SIS424DN-T1-GE3
- 功能描述:
MOSFET 20V 35A 39W
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商
- 企業(yè):
天津市博通航睿技術(shù)有限公司
- 商鋪:
- 聯(lián)系人:
馬總
- 手機(jī):
18322198211
- 詢價:
- 電話:
18322198211
- 地址:
天津市南開區(qū)科研西路12號356室
相近型號
- SIS42224VDC
- SIS426DN-T1-E3
- SIS416DNT-T1-GE3
- SIS416DN-T1-E3
- SIS426DN-T1-GE
- SIS415DNT-T1-GE3
- SIS426DNT1GE3
- SIS415DNTT1GE3
- SIS426DN-T1-GE3
- SIS415DNT-T1-E3
- SIS426DN-T1-GE3CT
- SIS415DN-T1-GE3
- SIS426DN-T1-GE3IC
- SIS415DN-T1-E3T
- SIS415DN-T1-E3
- SIS427EDN
- SIS427EDN-T1-E3
- SIS427EDNT1GE3
- SIS414DN-T1-GE3IC
- SIS427EDN-T1-GE3
- SIS414DN-T1-GE3
- SIS427EDN-T1-GE3IC
- SIS414DNT1GE3
- SIS414DN-T1G
- SIS429DNT
- SIS414DN-T1-E3
- SIS429DN-T1-E3
- SIS414DN
- SIS429DN-T1-E3T
- SIS429DNT-T1-GE3
- SIS413DN-T1-GE3IC
- SIS430DN
- SIS413DN-T1-GE3
- SIS430DN-T1-E3
- SIS413DNT1GE3
- SIS430DNT1GE3
- SIS413DN-T1-E3
- SIS430DN-T1-GE3
- SIS413DN-T1
- SIS413DN
- SIS432DN-T1-E3
- SIS4130N-T1
- SIS432DN-T1-GE3
- SIS434DN
- SIS412DN-TI-GE3
- SIS434DN-T1-E3
- SIS434DNT1GE3
- SIS434DN-T1-GE3
- SIS412DN-T1-GE3-W
- SIS412DN-T1-GE3QFN8