訂購數(shù)量 | 價(jià)格 |
---|---|
1+ |
SiS434DN-T1-GE3_ROHM/羅姆_MOSFET 40V 35A 52W 7.6mohm @ 10V科恒偉業(yè)二部
- 詳細(xì)信息
- 規(guī)格書下載
產(chǎn)品屬性
- 類型
描述
- 型號(hào):
SiS434DN-T1-GE3
- 功能描述:
MOSFET 40V 35A 52W 7.6mohm @ 10V
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商
- 企業(yè):
深圳市科恒偉業(yè)電子有限公司
- 商鋪:
- 聯(lián)系人:
李小姐/黃先生
- 手機(jī):
13424246946
- 詢價(jià):
- 電話:
0755-82569753
- 傳真:
0755-83205202
- 地址:
深圳市福田區(qū)振興路101號(hào)華勻1棟5樓B14
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