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SKB10N60

Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

·75lowerEoffcomparedtopreviousgenerationcombinedwith lowconductionlosses ·Shortcircuitwithstandtime–10ms ·Designedfor: -Motorcontrols -Inverter ·NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebe

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKB10N60

HighSpeed 2-Technology

?Designedfor: -TV–HorizontalLineDeflection ?2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKB10N60A

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmitterControlledDiode ●75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ●Shortcircuitwithstandtime–10μs ●Designedfor: ??-Motorcontrols ??-Inverter ●NPT-Technologyfor600Va

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKB10N60A

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKB10N60A_07

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKP10N60

FastS-IGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

·75lowerEoffcomparedtopreviousgenerationcombinedwith lowconductionlosses ·Shortcircuitwithstandtime–10ms ·Designedfor: -Motorcontrols -Inverter ·NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebe

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKP10N60A

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmitterControlledDiode ●75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ●Shortcircuitwithstandtime–10μs ●Designedfor: ??-Motorcontrols ??-Inverter ●NPT-Technologyfor600Va

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKP10N60A

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKW10N60

FastS-IGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

·75lowerEoffcomparedtopreviousgenerationcombinedwith lowconductionlosses ·Shortcircuitwithstandtime–10ms ·Designedfor: -Motorcontrols -Inverter ·NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebe

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKW10N60A

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKW10N60A

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmitterControlledDiode ●75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ●Shortcircuitwithstandtime–10μs ●Designedfor: ??-Motorcontrols ??-Inverter ●NPT-Technologyfor600Va

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKW10N60A

HighSpeed2-Technology

?Designedfor: -TV–HorizontalLineDeflection ?2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SLB10N60C

600VN-ChannelMOSFET

MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd

美普森深圳市美普森半導(dǎo)體有限公司

SLF10N60C

600VN-ChannelMOSFET

MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd

美普森深圳市美普森半導(dǎo)體有限公司

SLF10N60U

600VN-ChannelMOSFET

MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd

美普森深圳市美普森半導(dǎo)體有限公司

SLI10N60C

600VN-ChannelMOSFET

MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd

美普森深圳市美普森半導(dǎo)體有限公司

SLP10N60C

600VN-ChannelMOSFET

MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd

美普森深圳市美普森半導(dǎo)體有限公司

SLP10N60U

600VN-ChannelMOSFET

MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd

美普森深圳市美普森半導(dǎo)體有限公司

SSF10N60

600VN-ChannelMOSFET

Good-Ark

GOOD-ARK Electronics

SSF10N60

AdvancedMOSFETprocesstechnology

SILIKRONSilikron Semiconductor Co.,LTD.

新硅能微電子新硅能微電子(蘇州)有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    SKB10N60

  • 功能描述:

    IGBT 晶體管 FAST IGBT NPT TECH 600V 10A

  • RoHS:

  • 制造商:

    Fairchild Semiconductor

  • 配置:

    集電極—發(fā)射極最大電壓

  • VCEO:

    650 V

  • 集電極—射極飽和電壓:

    2.3 V

  • 柵極/發(fā)射極最大電壓:

    20 V 在25

  • C的連續(xù)集電極電流:

    150 A

  • 柵極—射極漏泄電流:

    400 nA

  • 功率耗散:

    187 W

  • 封裝/箱體:

    TO-247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INFINEON
SOT-263
30216
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
詢價(jià)
INF
2405+
TO-263
4475
只做原裝正品渠道訂貨
詢價(jià)
INFINEON
24+
TO-263
9000
詢價(jià)
INFINEON
23+
TO-263
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價(jià)
INFINEON
1822+
SOT-263
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
詢價(jià)
INFINEON
18+
SOT-263
41200
原裝正品,現(xiàn)貨特價(jià)
詢價(jià)
INFINEON
2023+
SOT-263
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
詢價(jià)
INFINEON/英飛凌
22+
SOT-263
20000
保證原裝正品,假一陪十
詢價(jià)
INFINEON/英飛凌
2021+
SOT-263
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
詢價(jià)
INFINEON/英飛凌
23+
TO-263
10000
公司只做原裝正品
詢價(jià)
更多SKB10N60供應(yīng)商 更新時(shí)間2024-10-30 14:00:00