零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
SKP15N60 | Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode ?75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationso | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
SKP15N60 | Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
包裝:管件 封裝/外殼:TO-220-3 類別:分立半導體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 31A 139W TO220-3 | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode ?75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationso | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
IscN-ChannelMOSFETTransistor ?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplication | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
CoolMOSTMPowerTransistorFeaturesIntrinsicfast-recoverybodydiode Features ?Intrinsicfast-recoverybodydiode ?Extremelylowreverserecoverycharge ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDECfortargetapplications CoolMOSCFDdesignedfor: ?SoftswitchingPWMStages ?LCD&CRTTV | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOSTMPowerTransistorIntrinsicfast-recoverybodydiode Features ?Intrinsicfast-recoverybodydiode ?Extremelylowreverserecoverycharge ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDECfortargetapplications CoolMOSCFDdesignedfor: ?SoftswitchingPWMStages ?LCD&CRTTV | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
iscN-ChannelMOSFETTransistor ?DESCRITION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.33? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
CoolMOSTMPowerTransistorFeaturesIntrinsicfast-recoverybodydiode Features ?Intrinsicfast-recoverybodydiode ?Extremelylowreverserecoverycharge ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedforindustrialgradeapplicationsaccordingtoJEDEC CoolMOSCFDdesignedfor: ?SoftswitchingP | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOSPowerTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor ?DESCRITION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.33? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
Intrinsicfast-recoverybodydiode
| InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
SiliconN-ChannelMOSFET | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司 | Winsemi | ||
SiliconN-ChannelMOSFET | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司 | Winsemi |
詳細參數(shù)
- 型號:
SKP15N60
- 功能描述:
IGBT 晶體管 FAST IGBT NPT TECH 600V 15A
- RoHS:
否
- 制造商:
Fairchild Semiconductor
- 配置:
集電極—發(fā)射極最大電壓
- VCEO:
650 V
- 集電極—射極飽和電壓:
2.3 V
- 柵極/發(fā)射極最大電壓:
20 V 在25
- C的連續(xù)集電極電流:
150 A
- 柵極—射極漏泄電流:
400 nA
- 功率耗散:
187 W
- 封裝/箱體:
TO-247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Infineon(英飛凌) |
23+ |
標準封裝 |
17048 |
原廠渠道供應,大量現(xiàn)貨,原型號開票。 |
詢價 | ||
INF |
24+ |
350 |
詢價 | ||||
西門康 |
100 |
原裝現(xiàn)貨,價格優(yōu)惠 |
詢價 | ||||
INFINEON |
22+ |
TO-200 |
8000 |
詢價 | |||
INF |
16+ |
TO-220 |
10000 |
全新原裝現(xiàn)貨 |
詢價 | ||
INF |
2020+ |
TO-220 |
35000 |
100%進口原裝正品公司現(xiàn)貨庫存 |
詢價 | ||
Infineon |
1726+ |
TO-220 |
6528 |
只做進口原裝正品現(xiàn)貨,假一賠十! |
詢價 | ||
INFINEON |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
INFINEON |
23+ |
TO-220 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
INFINEON |
20+ |
TO-220 |
38900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 |
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