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GAL16V8D-10LD

HighPerformanceE2CMOSPLDGenericArrayLogic?

LatticeLattice Semiconductor

萊迪思萊迪思半導體公司

GAL16V8D-10LJ

HighPerformanceE2CMOSPLD

LatticeLattice Semiconductor

萊迪思萊迪思半導體公司

GAL16V8D-10LJ

HighPerformanceE2CMOSPLDGenericArrayLogic?

LatticeLattice Semiconductor

萊迪思萊迪思半導體公司

GAL16V8D-10LJ

HighPerformanceE2CMOSPLDGenericArrayLogic?

LatticeLattice Semiconductor

萊迪思萊迪思半導體公司

GAL16V8D-10LJ

AllDevicesDiscontinued

Features ?HIGHPERFORMANCEE2CMOS?TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS? AdvancedCMOSTechnology ?50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon

LatticeLattice Semiconductor

萊迪思萊迪思半導體公司

GAL16V8D-10LJ

HighPerformanceE2CMOSPLDGenericArrayLogic?

LatticeLattice Semiconductor

萊迪思萊迪思半導體公司

GAL16V8D-10LJ

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features ?HIGHPERFORMANCE

LatticeLattice Semiconductor

萊迪思萊迪思半導體公司

GAL16V8D-10LJI

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features ?HIGHPERFORMANCE

LatticeLattice Semiconductor

萊迪思萊迪思半導體公司

GAL16V8D-10LJI

HighPerformanceE2CMOSPLDGenericArrayLogic?

LatticeLattice Semiconductor

萊迪思萊迪思半導體公司

GAL16V8D-10LJI

HighPerformanceE2CMOSPLDGenericArrayLogic?

LatticeLattice Semiconductor

萊迪思萊迪思半導體公司

GAL16V8D-10LJI

AllDevicesDiscontinued

Features ?HIGHPERFORMANCEE2CMOS?TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS? AdvancedCMOSTechnology ?50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon

LatticeLattice Semiconductor

萊迪思萊迪思半導體公司

GAL16V8D-10LJI

HighPerformanceE2CMOSPLDGenericArrayLogic?

LatticeLattice Semiconductor

萊迪思萊迪思半導體公司

GAL16V8D-10LJI

HighPerformanceE2CMOSPLD

LatticeLattice Semiconductor

萊迪思萊迪思半導體公司

GAL16V8D-10LJN

HighPerformanceE2CMOSPLD

LatticeLattice Semiconductor

萊迪思萊迪思半導體公司

GAL16V8D-10LJN

HighPerformanceE2CMOSPLDGenericArrayLogic?

LatticeLattice Semiconductor

萊迪思萊迪思半導體公司

GAL16V8D-10LJN

AllDevicesDiscontinued

Features ?HIGHPERFORMANCEE2CMOS?TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS? AdvancedCMOSTechnology ?50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon

LatticeLattice Semiconductor

萊迪思萊迪思半導體公司

GAL16V8D-10LJNI

HighPerformanceE2CMOSPLDGenericArrayLogic?

LatticeLattice Semiconductor

萊迪思萊迪思半導體公司

GAL16V8D-10LJNI

AllDevicesDiscontinued

Features ?HIGHPERFORMANCEE2CMOS?TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS? AdvancedCMOSTechnology ?50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon

LatticeLattice Semiconductor

萊迪思萊迪思半導體公司

GAL16V8D-10LP

HighPerformanceE2CMOSPLD

LatticeLattice Semiconductor

萊迪思萊迪思半導體公司

GAL16V8D-10LP

HighPerformanceE2CMOSPLDGenericArrayLogic?

LatticeLattice Semiconductor

萊迪思萊迪思半導體公司

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