首頁 >SMBT2907(A)>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
PNPSiliconSwitchingTransistor PNPSiliconSwitchingTransistors ●HighDCcurrentgain:0.1mAto500mA ●Lowcollector-emittersaturationvoltage ●Complementarytypes:SMBT2222,SMBT2222A(NPN) | SIEMENSSiemens Semiconductor Group 西門子德國西門子股份公司 | SIEMENS | ||
PNPSiliconSwitchingTransistorLowcollector-emittersaturationvoltage | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
PNPSiliconSwitchingTransistor PNPSiliconSwitchingTransistor ●HighDCcurrentgain:0.1mAto500mA ●Lowcollector-emittersaturationvoltage ●Complementarytype:SMBT2222A/MMBT2222A(NPN) | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
PNPSiliconSwitchingTransistors PNPSiliconSwitchingTransistors ●HighDCcurrentgain:0.1mAto500mA ●Lowcollector-emittersaturationvoltage ●Complementarytypes:SMBT2222,SMBT2222A(NPN) | SIEMENSSiemens Semiconductor Group 西門子德國西門子股份公司 | SIEMENS | ||
PNPSiliconSwitchingTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
GeneralPurposeTransistorsPNPSilicon Features ?SPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements;AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
GeneralPurposeTransistors GeneralPurposeTransistors PNPSilicon Features ?SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SMALLSIGNALPNPTRANSISTORS SMALLSIGNALPNPTRANSISTORS ■SILICONEPITAXIALPLANARPNPTRANSISTORS ■MINIATUREPLASTICPACKAGEFORAPPLICATIONINSURFACEMOUNTINGCIRCUITS ■MEDIUMCURRENTAFAMPLIFICATIONANDSWITCHING ■NPNCOMPLEMENTSARERESPECTIVELYSO2907ANDSO2907A | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
SMALLSIGNALPNPTRANSISTORS SMALLSIGNALPNPTRANSISTORS ■SILICONEPITAXIALPLANARPNPTRANSISTORS ■MINIATUREPLASTICPACKAGEFORAPPLICATIONINSURFACEMOUNTINGCIRCUITS ■MEDIUMCURRENTAFAMPLIFICATIONANDSWITCHING ■NPNCOMPLEMENTSARERESPECTIVELYSO2907ANDSO2907A | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Hi-Rel60V,0.6APNPtransistor | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Hi-Rel60V,0.6APNPtransistor | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Rad-hard60V,0.6APNPtransistor Features ?Hermeticpackages ?ESCCqualified ?100krad Description The2N2907AHRisabipolartransistorabletooperateundersevereenvironment conditionsandradiationexposureprovidinghighimmunitytototalionizingdose (TID). QualifiedasperESCC5202/001specificationandava | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Rad-hard60V,0.6APNPtransistor Features ?Hermeticpackages ?ESCCqualified ?100krad Description The2N2907AHRisabipolartransistorabletooperateundersevereenvironment conditionsandradiationexposureprovidinghighimmunitytototalionizingdose (TID). QualifiedasperESCC5202/001specificationandava | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Rad-hard60V,0.6APNPtransistor Features ?Hermeticpackages ?ESCCqualified ?100krad Description The2N2907AHRisabipolartransistorabletooperateundersevereenvironment conditionsandradiationexposureprovidinghighimmunitytototalionizingdose (TID). QualifiedasperESCC5202/001specificationandava | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Hi-Rel60V,0.6APNPtransistor | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Rad-hard60V,0.6APNPtransistor Features ?Hermeticpackages ?ESCCqualified ?100krad Description The2N2907AHRisabipolartransistorabletooperateundersevereenvironment conditionsandradiationexposureprovidinghighimmunitytototalionizingdose (TID). QualifiedasperESCC5202/001specificationandava | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Rad-hard60V,0.6APNPtransistor Features ?Hermeticpackages ?ESCCqualified ?100krad Description The2N2907AHRisabipolartransistorabletooperateundersevereenvironment conditionsandradiationexposureprovidinghighimmunitytototalionizingdose (TID). QualifiedasperESCC5202/001specificationandava | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Rad-hard60V,0.6APNPtransistor Features ?Hermeticpackages ?ESCCqualified ?100krad Description The2N2907AHRisabipolartransistorabletooperateundersevereenvironment conditionsandradiationexposureprovidinghighimmunitytototalionizingdose (TID). QualifiedasperESCC5202/001specificationandava | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
MediumCurrentGeneralPurposeAmplifiersandSwitches | RAYTHEONRaytheon Company. 雷神 | RAYTHEON | ||
MediumCurrentGeneralPurposeAmplifiersandSwitches | RAYTHEONRaytheon Company. 雷神 | RAYTHEON |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
INFINEO |
2023+ |
SMD |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
SOT-23 |
23+ |
NA |
15659 |
振宏微專業(yè)只做正品,假一罰百! |
詢價 | ||
INFINEON |
2016+ |
SOP |
6528 |
只做原廠原裝現(xiàn)貨!終端客戶個別型號可以免費(fèi)送樣品! |
詢價 | ||
INFINEON |
23+ |
SOT23 |
20000 |
原裝正品,假一罰十 |
詢價 | ||
infineon |
24+ |
SOT-23 |
3000 |
自己現(xiàn)貨 |
詢價 | ||
SIEMENS |
16+ |
原封裝 |
30188 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
INFINEON |
24+ |
SOT-23 |
2978 |
100%全新原裝公司現(xiàn)貨供應(yīng)!隨時可發(fā)貨 |
詢價 | ||
Infineon |
2020+ |
原廠封裝 |
350000 |
100%進(jìn)口原裝正品公司現(xiàn)貨庫存 |
詢價 | ||
INFINEON |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價 | ||
INFINEON |
23+ |
SOT23-3 |
63000 |
原裝正品現(xiàn)貨 |
詢價 |
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