SMP1330-085-EVB開發(fā)板套件編程器的射頻評估開發(fā)套件開發(fā)板規(guī)格書PDF中文資料

SMP1330-085-EVB屬于開發(fā)板套件編程器的射頻評估開發(fā)套件開發(fā)板。由美國思佳訊公司制造生產(chǎn)的SMP1330-085-EVB射頻評估和開發(fā)套件，開發(fā)板本系列中的產(chǎn)品適用于在已知實施環(huán)境中，提供能訪問射頻相關(guān)器件的功能或者有助于訪問該功能。所含的焦點(diǎn)產(chǎn)品范圍從射頻信號鏈元器件（如放大器和檢測器）到模塊化收發(fā)器，以及不直接包含焦點(diǎn)產(chǎn)品的適配器硬件，但此類硬件可供方便地訪問用戶單獨(dú)提供的特定射頻產(chǎn)品或系列。

Features

? Low thermal resistance: 91 °C/W

? Typical threshold level: +9 dBm

? Low capacitance: 0.55 pF

? Low-profile, ultra-miniature QFN (3-pin, 2 x 2 mm) package

(MSL1, 260 °C per JEDEC J-STD-020)

Description

The SMP1330-085LF is a surface-mountable, low-capacitance

silicon PIN limiter diode designed as a shunt connected PIN diode

for high power limiter applications up to 6 GHz.

Maximum resistance at 10 mA is 2 Ω and maximum capacitance

at 0 V is 0.55 pF. The combination of low junction capacitance,

low parasitic inductance, low thermal resistance, and nominal

2 um I-region width, makes the SMP1330-085LF useful in large

signal limiter applications. The threshold level is +9 dBm

at 1 GHz.

A block diagram of the SMP1330-085LF is shown in Figure 1. The

absolute maximum ratings of the SMP1330-085LF are provided in

Table 1. Electrical specifications are provided in Table 2.

Typical performance characteristics of the SMP1330-085LF are

provided in Table 3 and illustrated in Figures 4 and 5