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CED60P03

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-60A,RDS(ON)=9mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=15mW@VGS=-4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU60P03

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-60A,RDS(ON)=9mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=15mW@VGS=-4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

HLDD60P03

P-ChannelEnhancementModePowerMOSFET

HUILIDAShenzhen hui lida electronic co., LTD

匯利達(dá)廣東匯利達(dá)半導(dǎo)體有限公司

HLDD60P03

P-ChannelEnhancementModePowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

LMAK60P03

-30VP-ChannelEnhancementModeMOSFET

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

NCE60P03R

NCEP-ChannelEnhancementModePowerMOSFET

Description TheNCE60P03Rusesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Thisdeviceis wellsuitedforuseasaloadswitchorinPWMapplications.Application ●Loadswitch ●PWMapplication GeneralFeatures ●VDS=-60V,ID=-3A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司

NCE60P03Y

NCEP-ChannelEnhancementModePowerMOSFET

Description TheNCE60P03Yusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceiswellsuitedforuseasaloadswitchorinPWM applications. GeneralFeatures ●VDS=-60V,ID=-3A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司

RFG60P03

60A,30V,AvalancheRated,P-ChannelEnhancement-ModePowerMOSFETs

Features ?60A,30V ?rDS(ON)=0.027? ?TemperatureCompensatingPSPICE?Model ?PeakCurrentvsPulseWidthCurve ?UISRatingCurve ?175oCOperatingTemperature ?RelatedLiterature -TB334“GuidelinesforSolderingSurfaceMountComponentstoPCBoards”

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFG60P03

60A,30V,0.027Ohm,P-ChannelPowerMOSFETs

TheseP-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg

Intersil

Intersil Corporation

RFP60P03

60A,30V,AvalancheRated,P-ChannelEnhancement-ModePowerMOSFETs

Features ?60A,30V ?rDS(ON)=0.027? ?TemperatureCompensatingPSPICE?Model ?PeakCurrentvsPulseWidthCurve ?UISRatingCurve ?175oCOperatingTemperature ?RelatedLiterature -TB334“GuidelinesforSolderingSurfaceMountComponentstoPCBoards”

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

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Siliup(矽普)
23+
TOLL-8
200
三極管/MOS管/晶體管 > 場(chǎng)效應(yīng)管(MOSFET)
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六相
23+
ZIP
5000
原裝正品,假一罰十
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LX
22+23+
18203
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
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六相
20+
38500
全新現(xiàn)貨熱賣中歡迎查詢
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LX
2020+
棕
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
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LX
2022
3000
全新原裝現(xiàn)貨熱賣
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LX
22+
QFN20
50000
原裝正品.假一罰十
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DIP20
21+
CS
154
原裝現(xiàn)貨假一賠十
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SYSTEMGENERAL
23+
DIP20
11200
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO
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DIP20
CS
699839
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
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更多SP60P03GHTO供應(yīng)商 更新時(shí)間2025-1-27 9:02:00

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