首頁 >SPA11N60C3XK>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
IscN-ChannelMOSFETTransistor ?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
CoolMOSPowerTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-Channel650V(D-S)MOSFET FEATURES ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?LowswitchinglossesduetoreducedQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Telecommunications -Serverandtelecompowersupplies ?Light | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
CoolMOS??PowerTransistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOSPowerTransistor Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?150°Coperatingtemperature | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOSPowerTransistor Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?150°Coperatingtemperature | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
iscN-ChannelMOSFETTransistor ?DESCRITION ?Ultralowgatecharge ?Highpeakcurrentcapability ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.38? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice perform | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
CoolMOS??PowerTransistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOSPowerTransistor Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?150°Coperatingtemperature | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
詳細參數(shù)
- 型號:
SPA11N60C3XK
- 制造商:
Infineon Technologies
- 功能描述:
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Infineon |
1716+ |
? |
11520 |
只做原裝進口,假一罰十 |
詢價 | ||
INFINEON/英飛凌 |
24+ |
NA |
25500 |
授權(quán)代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價銷售 |
詢價 | ||
Infineon |
1931+ |
N/A |
493 |
加我qq或微信,了解更多詳細信息,體驗一站式購物 |
詢價 | ||
INFINEON/英飛凌 |
2021+ |
SMD |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
INFINEON |
1809+ |
TO220-3 |
1675 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
INFINEON/英飛凌 |
22+ |
TO220FP-3 |
9600 |
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實單! |
詢價 | ||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨詢更多詳細信息, |
詢價 | ||
INFINEON/英飛凌 |
21+ |
NA |
12820 |
只做原裝,質(zhì)量保證 |
詢價 | ||
Infineon Technologies |
22+ |
TO2203 |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
INFINEON/英飛凌 |
23+ |
NA |
11200 |
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO |
詢價 |
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