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SPB1012-R10Y

Power Bead Inductors

Features -Shieldedconstructionforlowradiation -Highratedcurrent -LowDCR -RoHScompliantandhalogenfree

BournsBourns Electronic Solutions

伯恩斯

SPB1012-R12Y

Power Bead Inductors

Features -Shieldedconstructionforlowradiation -Highratedcurrent -LowDCR -RoHScompliantandhalogenfree

BournsBourns Electronic Solutions

伯恩斯

SPB1012-R13Y

Power Bead Inductors

Features -Shieldedconstructionforlowradiation -Highratedcurrent -LowDCR -RoHScompliantandhalogenfree

BournsBourns Electronic Solutions

伯恩斯

SPB1012-R15Y

Power Bead Inductors

Features -Shieldedconstructionforlowradiation -Highratedcurrent -LowDCR -RoHScompliantandhalogenfree

BournsBourns Electronic Solutions

伯恩斯

SPB1012-R33Y

Power Bead Inductors

Features -Shieldedconstructionforlowradiation -Highratedcurrent -LowDCR -RoHScompliantandhalogenfree

BournsBourns Electronic Solutions

伯恩斯

SPB11N60C2

Marking：11N60C2；Package：P-TO263-3-2；Cool MOS??Power Transistor

Feature 1.Newrevolutionaryhighvoltagetechnology 2.Ultralowgatecharge 3.Periodicavalancherated 4.Extremedv/dtrated 5.Ultraloweffectivecapacitances

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB11N60C3

Marking：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SPB11N60C3

N-Channel 650 V (D-S) MOSFET

FEATURES ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?LowswitchinglossesduetoreducedQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Telecommunications -Serverandtelecompowersupplies ?Light

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

SPB11N60C3

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB11N60C3

Cool MOS Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?150°Coperatingtemperature

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    SPB1

  • 制造商：

    Hammond Manufacturing

  • 類別：

    盒子，外殼，機(jī)架 > 盒組件

  • 系列：

    SPB

  • 包裝：

    袋

  • 類型：

    面板套件

  • 特性：

    鉸接式

  • 配套使用/相關(guān)產(chǎn)品：

    1414，EJ，C3R-HCLO 系列

  • 描述：

    PANEL SWING KIT

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Hammond
2020+
N/A
155
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物
 詢價(jià)
Hammond
22+
NA
155
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
infineon
TO-263
3200
原裝長(zhǎng)期供貨!
 詢價(jià)
Infineon
24+
TO-263
7500
詢價(jià)
INFINEON
24+
原封裝
428
原裝現(xiàn)貨假一罰十
 詢價(jià)
INFINEON
1522MY
D2PAK
4000
原廠直銷
 詢價(jià)
INFINEON
24+
D2PAK
3000
全新原裝環(huán)?，F(xiàn)貨
 詢價(jià)
INF
23+
SOT404
5000
原裝正品,假一罰十
 詢價(jià)
INFINEON
23+
TO263
8820
全新原裝優(yōu)勢(shì)
 詢價(jià)
INFINEON
2016+
TO-263
6000
公司只做原裝,假一罰十,可開(kāi)17%增值稅發(fā)票!
 詢價(jià)
更多SPB1供應(yīng)商 更新時(shí)間2025-4-7 10:18:00

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