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SPL-I-AC-30N50

Microprocessor-Controlled Industrial Power Supply

HVPSI

High Voltage Power Solutions, Inc.

30N50

15TQ060

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FSW30N50C

THINKISEMI24A,500VN-CHANNELPLANARSTRIPEPOWERMOSFETs

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

ITW30N50R

N-ChannelMOSFET

Applications: ●Adaptor ●Charger ●SMPS Features: ●RoHSCompliant ●LowONResistance ●LowGateCharge ●PeakCurrentvsPulseWidthCurve ●InductiveSwitchingCurves

INPOWER

InPower Semiconductor Co., Ltd.

IXFH30N50

HiPerFETPowerMOSFETs

N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easytodriveandtoprotect ?Fastintrin

IXYS

IXYS Corporation

IXFH30N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=30A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.16Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH30N50P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=30A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH30N50P

PolarHVHiPerFETPowerMOSFET

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXFK30N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.16Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFK30N50Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●Moldingepox

IXYS

IXYS Corporation

IXFR30N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=160mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFR30N50

HiPerFETPowerMOSFETsISOPLUS247

IXYS

IXYS Corporation

IXFR30N50Q

HiPerFETPowerMOSFETsISOPLUS247

IXYS

IXYS Corporation

IXFT30N50

HiPerFETPowerMOSFETs

N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easytodriveandtoprotect ?Fastintrin

IXYS

IXYS Corporation

IXFT30N50P

PolarHVHiPerFETPowerMOSFET

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXFV30N50P

PolarHVHiPerFETPowerMOSFET

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXFV30N50PS

PolarHVHiPerFETPowerMOSFET

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXFX30N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.16Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFX30N50Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●Moldingepox

IXYS

IXYS Corporation

IXTH30N50

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
GENERIC
新
77
全新原裝 貨期兩周
 詢價(jià)
C&K
1921+
-
3575
向鴻倉庫現(xiàn)貨,優(yōu)勢(shì)絕對(duì)的原裝!
 詢價(jià)
C&K
2021+
-
499
詢價(jià)
CONEXANI
24+
QFP100
1200
詢價(jià)
CONEXANI
16+
QFP100
953
原裝現(xiàn)貨假一罰十
 詢價(jià)
CONEXANI
23+
QFP100
10800
只做原裝 歡迎咨詢
 詢價(jià)
VARI-L
23+
new
11200
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO
 詢價(jià)
RFMD
22+
LGA28
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價(jià)
VARIL
21+
SMD
330
原裝現(xiàn)貨假一賠十
 詢價(jià)
VARIL
22+
SMD
28600
只做原裝正品現(xiàn)貨假一賠十一級(jí)代理
 詢價(jià)
更多SPL-I-AC-30N50供應(yīng)商 更新時(shí)間2024-10-24 16:05:00

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