首頁 >SPN02N60C3>規(guī)格書列表
零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
SPN02N60C3 | Cool MOS??Power Transistor Features ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Ultraloweffectivecapacitances ?Extremedv/dtrated ?QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
SPN02N60C3 | New revolutionary high voltage technology Ultra low gate charge Ultra low effective capacitances | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
New revolutionary high voltage technology Ultra low gate charge Ultra low effective capacitances | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
COOLMOSPOWERTRANSISTOR | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor ?DESCRIPTION ?Ultralowgatecharge ?Ultraloweffectivecapacitance ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤3? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOSPowerTransistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOSPowerTransistorFeaturenewrevolutionaryhighvoltagetechnology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOS??PowerTransistor Features ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI |
詳細(xì)參數(shù)
- 型號(hào):
SPN02N60C3
- 功能描述:
MOSFET COOL MOS PWR TRANS 650V .4A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Infineon(英飛凌) |
23+ |
標(biāo)準(zhǔn)封裝 |
13048 |
原廠渠道供應(yīng),大量現(xiàn)貨,原型號(hào)開票。 |
詢價(jià) | ||
INFINEON/英飛凌 |
24+ |
SOT-223 |
17000 |
只做原廠渠道 可追溯貨源 |
詢價(jià) | ||
INFINEON |
24+ |
SOT223 |
8510 |
絕對(duì)原裝現(xiàn)貨,價(jià)格低,歡迎詢購(gòu)! |
詢價(jià) | ||
INFINEON |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
INFINEON |
22+ |
P-SOT223-4-4 |
15352 |
原裝現(xiàn)貨庫存.價(jià)格優(yōu)勢(shì) |
詢價(jià) | ||
INFINE0N |
23+ |
SOT-223 |
11846 |
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價(jià) | ||
英飛凌|Infineon |
21+ |
SOT223 |
12588 |
原裝正品,自己庫存 |
詢價(jià) | ||
INFINEON |
23+ |
SOT223 |
66800 |
原廠授權(quán)一級(jí)代理,專注汽車、醫(yī)療、工業(yè)、新能源! |
詢價(jià) | ||
INFINEON/英飛凌 |
24+ |
SOT223 |
98000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
INFINEO |
2020+ |
SOT-223 |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) |
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