首頁 >SPP03N60S5>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
SPP03N60S5 | N-Channel MOSFET Transistor ?DESCRIPTION ?Ultralowgatecharge ?Ultraloweffectivecapacitance ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤1.4? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice perf | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
SPP03N60S5 | Cool MOS??Power Transistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
SPP03N60S5 | Cool MOS??Power Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
SPP03N60S5 | Cool MOS??Power Transistor Feature New revolutionary high voltage technology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
Cool MOS??Power Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Cool MOS??Power Transistor Feature New revolutionary high voltage technology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
N-ChannelMOSFETTransistor ?DESCRITION ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤1.4? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor ?DESCRIPTION ?Ultralowgatecharge ?Ultraloweffectivecapacitance ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤1.4? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice perf | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC |
詳細(xì)參數(shù)
- 型號:
SPP03N60S5
- 功能描述:
MOSFET COOL MOS N-CH 600V 3.2A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
INF |
19+ |
TO-220 |
18628 |
詢價 | |||
INFINEON/英飛凌 |
2021+ |
TO-220 |
17404 |
原裝進(jìn)口假一罰十 |
詢價 | ||
Infineon(英飛凌) |
23+ |
TO-220 |
7793 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價 | ||
Infineon |
17+ |
TO-220 |
6200 |
詢價 | |||
INFINEON |
23+ |
T0-220 |
7936 |
詢價 | |||
INFINEON |
24+ |
原裝進(jìn)口原廠原包接受訂貨 |
500 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
英飛凌 |
06+ |
TO-220 |
4500 |
原裝 |
詢價 | ||
INFINEON |
2016+ |
TO-220 |
6528 |
房間原裝進(jìn)口現(xiàn)貨假一賠十 |
詢價 | ||
INFINEON |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價 | ||
INFINEON |
22+ |
TO-220 |
56315 |
原裝現(xiàn)貨庫存.價格優(yōu)勢 |
詢價 |
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