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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
SPW20N60C3	文件：335.47 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor ?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤190m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
SPW20N60C3	文件：258.86 Kbytes Page：12 Pages	Cool MOS Power Transistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC0)fortargetapplications	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
SPW20N60C3	文件：771.02 Kbytes Page：13 Pages	Cool MOS Power Transistor	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
SPW20N60C3_08	文件：771.02 Kbytes Page：13 Pages	Cool MOS Power Transistor	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
20N60C3	文件：314.6 Kbytes Page：14 Pages	CoolMOSPowerTransistor Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
20N60C3	文件：81.67 Kbytes Page：7 Pages	45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderately	Intersil Intersil Corporation	Intersil
G20N60C3	文件：144.01 Kbytes Page：8 Pages	45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
HGTG20N60C3	文件：153.1 Kbytes Page：8 Pages	45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
HGTG20N60C3	文件：81.67 Kbytes Page：7 Pages	45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderately	Intersil Intersil Corporation	Intersil
HGTG20N60C3	文件：144.01 Kbytes Page：8 Pages	45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
HGTG20N60C3D	文件：82.71 Kbytes Page：7 Pages	45A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderate	Intersil Intersil Corporation	Intersil
HGTG20N60C3D	文件：123.08 Kbytes Page：8 Pages	45A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderate	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
HGTG20N60C3R	文件：107.72 Kbytes Page：6 Pages	40A,600V,RuggedUFSSeriesN-ChannelIGBTs	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
HGTP20N60C3	文件：144.01 Kbytes Page：8 Pages	45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
HGTP20N60C3	文件：153.1 Kbytes Page：8 Pages	45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
HGTP20N60C3	文件：81.67 Kbytes Page：7 Pages	45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderately	Intersil Intersil Corporation	Intersil
HGTP20N60C3R	文件：107.72 Kbytes Page：6 Pages	40A,600V,RuggedUFSSeriesN-ChannelIGBTs	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
ISPP20N60C3	文件：339.04 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.19? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice perfor	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
ISPW20N60C3	文件：335.47 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor ?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤190m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
SPA20N60C3	文件：313.83 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor ?FEATURES ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Highpeakcurrentcapability ?Improvedtransconductance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC

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詳細(xì)參數(shù)

型號(hào)：
SPW20N60C3
功能描述：
MOSFET COOL MOS N-CH 650V 20.7A
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市卓越微芯電子有限公司	SPW20N60C3	INFINEON	2020+	TO-247	9600	百分百原裝正品真實(shí)公司現(xiàn)貨庫(kù)存本公司只做原裝可	詢價(jià)
深圳市勤思達(dá)科技有限公司	SPW20N60C3	IR	2020+	TO-247	22000	全新原裝正品現(xiàn)貨庫(kù)存價(jià)格優(yōu)勢(shì)	詢價(jià)
深圳市興燦科技有限公司	SPW20N60C3	INFINEON	24+	TO-247	20000	進(jìn)口原裝現(xiàn)貨	詢價(jià)
深圳市宏譽(yù)半導(dǎo)體有限公司	SPW20N60C3	INFINEON	11+	TO-247	42	全新原裝	詢價(jià)
深圳市昌和盛利電子有限公司	SPW20N60C3	INFINEON原裝正品	23+	TO-247	12500	專注原裝正品現(xiàn)貨特價(jià)中量大可定	詢價(jià)
深圳市正邁科技有限公司	SPW20N60C3	INFINEON	23+	N-MOSFET/600V/20.7A/0.1	134	正邁科技原裝現(xiàn)貨授權(quán)代理主營(yíng):IC電容.二三級(jí)管原裝	詢價(jià)
深圳市龍瀚電子有限公司	SPW20N60C3	INFINEO	16+	TO-247	6279	全新原裝/深圳現(xiàn)貨庫(kù)2	詢價(jià)
深圳市賽爾通科技有限公司	SPW20N60C3	INFINEON	23+	TO-247	65400		詢價(jià)
深圳市英科美電子有限公司	SPW20N60C3	INFINEON/英飛凌	2021+	TO-247	18079	原裝進(jìn)口假一罰十	詢價(jià)
深圳市納艾斯科技有限公司	SPW20N60C3	INFINEON	2020+	原廠原裝正品	8000	只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增	詢價(jià)

更多SPW20N60C3供應(yīng)商更新時(shí)間2024-12-25 16:02:00

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