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SQJQ130EL

AutomotiveN-Channel30V(D-S)175?CMOSFET

FEATURES ?TrenchFET?GenIVpowerMOSFET ?AEC-Q101qualified ?100RgandUIStested ?Thin1.6mmpackage ?Verylowthermalresistance ?Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SQJQ130EL

AutomotiveN-Channel30V(D-S)175°CMOSFET

FEATURES ?TrenchFET?GenIVpowerMOSFET ?AEC-Q101qualified ?100RgandUIStested ?Thin1.6mmpackage ?Verylowthermalresistance ?Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SR130

1.0AMPSCHOTTKYBARRIERRECTIFIERS

FORMOSAFormosa MS

美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司

SR130

1.0AMPSCHOTTKYBARRIERRECTIFIERS

VOLTAGERANGE20to100VoltsCURRENT1.0Ampere FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction

BYTES

Bytes

SR130

SCHOTTKYBARRIERRECTIFIER(VOLTAGERANGE20to60VoltsCURRENT1.0Ampere)

RECTRON

Rectron Semiconductor

SR130

1.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionforTransientProtection ●HighCurrentCapability ●LowPowerLoss,HighEfficiency ●HighSurgeCurrentCapability ●ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtectionApplications

WTEWon-Top Electronics

毅星電子毅星電子股份有限公司

SR130

1.0ASCHOTTKYBARRIERDIODE

WTEWon-Top Electronics

毅星電子毅星電子股份有限公司

SR130

SCHOTTKYBARRIERRECTIFIERS

REVERSEVOLTAGE-20to100Volts FORWARDCURRENT-1.0Ampere FEATURES ●Metal-Semiconductorjunctionwithgardring ●Epitaxialconstruction ●Lowforwardvoltagedrop ●Highcurrentcapability ●TheplasticmaterialcarriesULrecognition94V-0 ●Foruseinlowvlotage,highfrequencyin

HY

HY ELECTRONIC CORP.

SR130

1.0AMP.SCHOTTKYBARRIERRECTIFIERS

■Features ●Io1.0A ●VRRM20V-100V ●Highsurgecurrentcapability ■Applications ●Rectifier

YANGJIEYangzhou yangjie electronic co., ltd

揚(yáng)州揚(yáng)杰電子揚(yáng)州揚(yáng)杰電子科技股份有限公司

SR130

VOLTAGE20V~100V1.0AMPSchottkyBarrierRectifiers

FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

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