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RC0402JR-07330L

HeterojunctionBipolarTransistorTechnology(InGaPHBT)

HeterojunctionBipolarTransistorTechnology(InGaPHBT) HighEfficiency/LinearityAmplifier TheMMZ25332Bisa2--stage,highlinearityInGaPHBTbroadbandamplifierdesignedforfemtocell,picocell,WLAN(802.11g/n),W--CDMA,TD--SCDMAandLTEwirelessbroadbandapplications.Itprovidesexcep

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

RC0402JR-07330RL

HeterojunctionBipolarTransistorTechnology(InGaPHBT)

HeterojunctionBipolarTransistorTechnology(InGaPHBT) HighEfficiency/LinearityAmplifier TheMMA25312Bisa2-stagehighefficiencyInGaPHBTdriveramplifierdesignedforusein2400MHzISMapplications,WLAN(802.11g),WiMAX(802.16e)andwirelessbroadbandmeshnetworks.Itissuitablef

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

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35960
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50000
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更多SR0402JR-07330RL供應(yīng)商 更新時(shí)間2025-1-7 9:30:00