SS22T3G_V02中文資料安森美半導體數(shù)據(jù)手冊PDF規(guī)格書

These devices employ the Schottky Barrier principle in a

metal?to?silicon power rectifier. Features epitaxial construction with

oxide passivation and metal overlay contact. Ideally suited for low

voltage, high frequency switching power supplies; free wheeling

diodes and polarity protection diodes.

Features

? Compact Package with J?Bend Leads Ideal for Automated Handling

? Highly Stable Oxide Passivated Junction

? Guardring for Over?Voltage Protection

? Low Forward Voltage Drop

? NRVB Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC?Q101

Qualified and PPAP Capable*

? These Devices are Pb?Free and are RoHS Compliant

Mechanical Characteristics

? Case: Molded Epoxy

? Epoxy Meets UL 94 V?0 @ 0.125 in

? Weight: 95 mg (approximately)

? Cathode Polarity Band

? Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

? Available in 12 mm Tape, 2500 Units per 13 in Reel, Add “T3”

Suffix to Part Number

? Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

? ESD Ratings: Machine Model = C

ESD Ratings: Human Body Model = 3B