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SSG60N60NDB

85 AMP 600 VOLTS FAST POWER IGBT

SSDI

Solid States Devices, Inc

60N60

HiPerFASTTMIGBTswithDiode

HiPerFAST?IGBTswithDiode C2-ClassHighSpeedIGBTs Features ?InternationalStandardPackageminiBLOC ?AluminiumNitrideIsolation-HighPowerDissipation ?Anti-ParallelUltraFastDiode ?IsolationVoltage3000V~ ?LowVCE(sat)forMinimumOn-StateConductionLosses ?MOSGateTurn

IXYS

IXYS Corporation

60N60

Ultra-LowVCE(sat)IGBT

Features ●InternationalstandardpackageSOT-227B ●Aluminiumnitrideisolation -highpowerdissipation ●Isolationvoltage3000V~ ●Veryhighcurrent,fastswitchingIGBT ●LowVCE(sat)forminimumon-stateconductionlosses ●MOSGateturn-ondrivesimplicity ●Lowcollector-to-cas

IXYS

IXYS Corporation

60N60

HiPerFASTTMIGBTswithDiode

HiPerFAST?IGBTswithDiode C2-ClassHighSpeedIGBTs Features ?InternationalStandardPackageminiBLOC ?AluminiumNitrideIsolation-HighPowerDissipation ?Anti-ParallelUltraFastDiode ?IsolationVoltage3000V~ ?LowVCE(sat)forMinimumOn-StateConductionLosses ?MOSGateTurn

IXYS

IXYS Corporation

60N60SFD

600V,60AFieldStopIGBT

Features ?HighCurrentCapability ?LowSaturationVoltage:VCE(sat)=2.3V@IC=60A ?HighInputImpedance ?FastSwitching ?RoHSCompliant GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild’sfieldstop IGBTsoffertheoptimumperformanceforsolarinverter,UP

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

APT60N60BCS

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT60N60BCS

SuperJunctionMOSFET

MicrosemiMicrosemi Corporation

美高森美美高森美公司

APT60N60BCS

SuperJunctionMOSFET

ADPOW

Advanced Power Technology

APT60N60BCSG

SuperJunctionMOSFET

ADPOW

Advanced Power Technology

APT60N60BCSG

SuperJunctionMOSFET

MicrosemiMicrosemi Corporation

美高森美美高森美公司

詳細(xì)參數(shù)

  • 型號：

    SSG60N60NDB

  • 制造商：

    SSDI

  • 制造商全稱：

    Solid States Devices, Inc

  • 功能描述：

    85 AMP 600 VOLTS FAST POWER IGBT

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更多SSG60N60NDB供應(yīng)商 更新時間2025-2-24 16:45:00

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