SSM3J132TU

TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)

○PowerManagementSwitchApplications ?1.2-Vdrive ?LowON-resistance:RDS(ON)=94m?(max)(@VGS=-1.2V) RDS(ON)=39m?(max)(@VGS=-1.5V) RDS(ON)=29m?(max)(@VGS=-1.8V)

SSM3J132TU

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

SSM3J132TU

MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications ?PowerManagementSwitches Features (1)1.2-Vdrive (2)Lowdrain-sourceon-resistance :RDS(ON)=94mΩ(max)(VGS=-1.2V) RDS(ON)=39mΩ(max)(VGS=-1.5V) RDS(ON)=29mΩ(max)(VGS=-1.8V) RDS(ON)=21mΩ(max)(VGS=-2.5V) RDS(ON)=17mΩ(max)(VGS=-4.5V)

SSM3J132TU_V01

MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications ?PowerManagementSwitches Features (1)1.2-Vdrive (2)Lowdrain-sourceon-resistance :RDS(ON)=94mΩ(max)(VGS=-1.2V) RDS(ON)=39mΩ(max)(VGS=-1.5V) RDS(ON)=29mΩ(max)(VGS=-1.8V) RDS(ON)=21mΩ(max)(VGS=-2.5V) RDS(ON)=17mΩ(max)(VGS=-4.5V)