零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
AdvancedPowerMOSFET AdvancedPowerMOSFET FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea LowerLeakageCurrent:25mA(Max.)@VDS=600V LowerRDS(ON):3.892W(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
600VN-ChannelMOSFET TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergypulseinth | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
AdvancedPowerMOSFET AdvancedPowerMOSFET FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea LowerLeakageCurrent:25mA(Max.)@VDS=600V LowerRDS(ON):3.892W(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
SAMSUNG |
NA |
8560 |
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨 |
詢價(jià) | |||
SMG |
05+ |
原廠原裝 |
1607 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
FAIRCHILD/FSC/仙童飛兆半 |
24+ |
TO-252 |
126200 |
新進(jìn)庫(kù)存/原裝 |
詢價(jià) | ||
SEC |
2020+ |
TO-252 |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
FSC |
2023+ |
TO-252 |
80000 |
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢價(jià) | ||
FSC |
24+ |
TO-252 |
35200 |
一級(jí)代理/放心采購(gòu) |
詢價(jià) | ||
JINGDAO/晶導(dǎo)微 |
23+ |
SMA(DO-214AC) |
69820 |
終端可以免費(fèi)供樣,支持BOM配單! |
詢價(jià) | ||
FSC |
0712 |
TO-252 |
2500 |
普通 |
詢價(jià) | ||
SAMSUNG/三星 |
21+ |
TO-252 |
30000 |
只做正品原裝現(xiàn)貨 |
詢價(jià) | ||
SEC |
07+ |
TO-252 |
2291 |
詢價(jià) |
相關(guān)規(guī)格書
更多- SSS10N60B
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- SST27SF010-70-3C-NH
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- SST28SF040A-90-4C-NH
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- SST2907A
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- SST29EE010-90-4C-PH
- SST29EE020-120-4C-PH
- SST29LE020-200-4C-NH
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- SST39SF020A-70-4C-NH
- SST39SF040-70-4C-NH
- SST39SF512-70-4C-NH
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- SST39VF1601-70-4C-EK
- SST39VF160-70-4C-EK
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- SST29EE010-120-4C-NH
- SST29EE010-90-4C-NH
- SST29EE020-120-4C-NH
- SST29LE010-150-4C-NH
- SST29LE512-150-4C-NH
- SST39SF010-90-4C-NH
- SST39SF020-70-4C-NH
- SST39SF020-90-4C-PH
- SST39SF020A-70-4C-PH
- SST39SF040-70-4C-PH
- SST39VF010-70-4C-NH
- SST39VF010-90-4C-NH
- SST39VF016-70-4C-EI
- SST39VF020-70-4C-NH
- SST39VF040-70-4C-NH
- SST39VF040-70-4C-WH
- SST39VF040-90-4C-NH
- SST39VF080-70-4C-EI
- SST39VF088-70-4C-EK
- SST39VF1601-70-4C-EKE
- SST39VF160-90-4C-EK
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- SST39VF400A-90-4C-EK
- SST39VF512-70-4C-WH
- SST39VF800-70-4C-EK
- SST45LF010-10-4C-SA
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- SST89C58-33-C-NJ
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