SST25VF020B-80-4I-Q3AE集成電路（IC）的存儲(chǔ)器規(guī)格書(shū)PDF中文資料

SST25VF020B-80-4I-Q3AE屬于集成電路（IC）的存儲(chǔ)器。由微芯科技股份有限公司制造生產(chǎn)的SST25VF020B-80-4I-Q3AE存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Description

The 25 series Serial Flash family features a four-wire,

SPI compatible interface that allows for a low pin count

package which occupies less board space and ultimately

lowers total system costs. The SST25VF020B

devices are enhanced with improved operating

frequency and even lower power consumption.

SST25VF020B SPI serial Flash memories are manufactured

with SST proprietary, high-performance

CMOS SuperFlash? technology. The split-gate cell

design and thick-oxide tunneling injector attain better

reliability and manufacturability compared with alternate

approaches.

The SST25VF020B devices significantly improve performance

and reliability, while lowering power consumption.

The devices write (Program or Erase) with a

single power supply of 2.7V-3.6V for SST25VF020B.

The total energy consumed is a function of the applied

voltage, current and time of application. Since for any

given voltage range the SuperFlash technology uses

less current to program and has a shorter erase time,

the total energy consumed during any erase or program

operation is less than alternative Flash memory

technologies.

Features

? Single Voltage Read and Write Operations:

- 2.7V-3.6V

? Serial Interface Architecture:

- SPI Compatible: Mode 0 and Mode 3

? High-Speed Clock Frequency:

- Up to 80 MHz

? Superior Reliability:

- Endurance: 100,000 cycles

- Greater than 100 years data retention

? Low-Power Consumption:

- Active Read current: 10 mA (typical)

- Standby Current: 5 μA (typical)

? Flexible Erase Capability:

- Uniform 4-Kbyte sectors

- Uniform 32-Kbyte overlay blocks

- Uniform 64-Kbyte overlay blocks

? Fast Erase and Byte Program:

- Chip Erase time: 35 ms (typical)

- Sector/Block Erase time: 18 ms (typical)

- Byte Program time: 7 μs (typical)

? Auto Address Increment (AAI) Programming:

- Decrease total chip programming time over

Byte Program operations

? End-of-Write Detection:

- Software polling the BUSY bit in STATUS

register

- Busy Status readout on SO pin in AAI mode

? Hold Pin (HOLD#):

- Suspends a serial sequence to the memory

without deselecting the device

? Write Protection (WP#):

- Enables/Disables the Lock-Down function of

the STATUS register

? Software Write Protection:

- Write protection through Block Protection bits

in STATUS register

? Temperature Ranges:

? All devices are RoHS compliant

- Commercial: 0?C to +70?C

- Industrial (I): -40?C to +85?C