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SST25WF080BT-40ESLASHNP13GVAO中文資料微芯科技數(shù)據(jù)手冊PDF規(guī)格書

SST25WF080BT-40ESLASHNP13GVAO
廠商型號

SST25WF080BT-40ESLASHNP13GVAO

功能描述

8-Mbit, 1.8V, SPI Serial Flash

文件大小

1.55603 Mbytes

頁面數(shù)量

44

生產(chǎn)廠商 Microchip Technology
企業(yè)簡稱

Microchip微芯科技

中文名稱

微芯科技股份有限公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-14 9:14:00

SST25WF080BT-40ESLASHNP13GVAO規(guī)格書詳情

Product Description

SST25WF080B is a member of the Serial Flash 25

Series family and feature a four-wire, SPI-compatible

interface that allows for a low pin-count package which

occupies less board space and ultimately lowers total

system costs. SPI serial flash memory is manufactured

with proprietary, high-performance CMOS

SuperFlash? technology. The split-gate cell design and

thick-oxide tunneling injector attain better reliability and

manufacturability compared with alternate approaches.

This Serial Flash significantly improve performance

and reliability, while lowering power consumption. The

device writes (Program or Erase) with a single power

supply of 1.65V-1.95V. The total energy consumed is a

function of the applied voltage, current, and time of

application. Since for any given voltage range, the

SuperFlash technology uses less current to program

and has a shorter erase time, the total energy consumed

during any Erase or Program operation is less

than alternative flash memory technologies.

Features

? Single Voltage Read and Write Operations

- 1.65V-1.95V

? Serial Interface Architecture

- SPI Compatible: Mode 0 and Mode 3

? High-Speed Clock Frequency

- 40MHz

? Dual Input/Output Support

- Fast-Read Dual-Output Instruction (3BH)

- Fast-Read Dual I/O Instruction (BBH)

? Superior Reliability

- Endurance: 100,000 Cycles

- Greater than 20 years Data Retention

? Ultra-Low Power Consumption:

- Active Read current: 4 mA (typical)

- Standby current: 7 μA (typical)

- Deep Power-down current: 2 μA (typical)

? Flexible Erase Capability

- Uniform 4-Kbyte sectors

- Uniform 64-Kbyte overlay blocks

? Page Program Mode

- 256 bytes/Page

? Fast Erase and Page-Program:

- Chip Erase time: 500 ms (typical)

- Sector Erase time: 40 ms (typical)

- Block Erase time: 80 ms (typical)

- Page Program time: 0.8 ms/ 256 bytes (typical)

? End-of-Write Detection

- Software polling the BUSY bit in STATUS Register

? Hold Pin (HOLD#)

- Suspend a serial sequence without

deselecting the device

? Write Protection (WP#)

- Enables/Disables the Lock-Down function of

the STATUS register

? Software Write Protection

- Write protection through Block-Protection bits

in STATUS register

? Temperature Range

- Industrial: -40°C to +85°C

- Extended: -40°C to +125°C

- AECQ-100 Qualified

? All devices are RoHS compliant

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價(jià)格
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