SST26VF020AT-80E/SN集成電路（IC）的存儲(chǔ)器規(guī)格書PDF中文資料

SST26VF020AT-80E/SN屬于集成電路（IC）的存儲(chǔ)器。由微芯科技股份有限公司制造生產(chǎn)的SST26VF020AT-80E/SN存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Product Description

The Serial Quad I/O? (SQI?) family of Flash memory

devices features a six-wire, 4-bit I/O interface that

allows for low-power, high-performance operation in a

low pin count package. SST26VF020A also supports

full command-set compatibility to traditional Serial

Peripheral Interface (SPI) protocol. System designs

using SQI Flash devices occupy less board space and

ultimately lower system costs.

All members of the 26 Series, SQI family are

manufactured with proprietary, high-performance

CMOS SuperFlash? technology. The split-gate cell

design and thick-oxide tunneling injector attain better

reliability and manufacturability compared with

alternate approaches.

SST26VF020A significantly improves performance and

reliability, while lowering power consumption. These

devices write (Program or Erase) with a single-power

supply of 2.3V-3.6V. The total energy consumed is a

function of the applied voltage, current and time of

application. Since for any given voltage range, the

SuperFlash technology uses less current to program

and has a shorter erase time, the total energy

consumed during any erase or program operation is

less than alternative Flash memory technologies.

Features

? Single Voltage Read and Write Operations:

- 2.7V-3.6V or 2.3V-3.6V

? Serial Interface Architecture:

- Nibble-wide multiplexed I/O’s with SPI-like

serial command structure:

- Mode 0 and Mode 3

- x1/x2/x4 Serial Peripheral Interface (SPI) Protocol

? High-Speed Clock Frequency:

- 2.7V-3.6V: 104 MHz maximum (Industrial)

- 2.3V-3.6V: 80 MHz maximum (Industrial and

Extended)

? Burst Modes:

- Continuous linear burst

- 8/16/32/64-byte linear burst with wrap-around

? Superior Reliability:

- Endurance: 100,000 cycles (minimum)

- Greater than 100 years data retention

? Low-Power Consumption:

- Active Read current: 15 mA (typical

@ 104 MHz)

- Standby Current: 15 μA (typical)

? Fast Erase Time:

- Sector/Block Erase: 20 ms (typical), 25 ms

(maximum)

- Chip Erase: 40 ms (typical), 50 ms

(maximum)

? Page-Program:

- 256 bytes per page in x1 or x4 mode

? End-of-Write Detection:

- Software polling the BUSY bit in STATUS

register

? Flexible Erase Capability:

- Uniform 4-Kbyte sectors

- Uniform 32-Kbyte overlay blocks

- Uniform 64-Kbyte overlay blocks

? Write-Suspend:

- Suspend program or erase operation to

access another block/sector

? Software Reset (RST) mode

? Software Write Protection:

- Write protection through Block Protection bits

in STATUS register

? Security ID:

- One-Time-Programmable (OTP) 2-Kbyte

Secure ID:

- 128-bit unique, factory preprogrammed

identifier

- User-programmable area

? Temperature Range:

- Industrial: -40°C to +85°C

- Extended: -40°C to +125°C

? Automotive AEC-Q100 Qualified

? Packages Available:

- 8-contact WDFN (6 mm x 5 mm)

- 8-lead SOIC (3.90 mm)

? All Devices are RoHS Compliant