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SST28VF040A-200-4I-NH
廠商型號

SST28VF040A-200-4I-NH

功能描述

4 Mbit (512K x8) SuperFlash EEPROM

文件大小

323.43 Kbytes

頁面數(shù)量

24

生產(chǎn)廠商 Silicon Storage Technology, Inc
企業(yè)簡稱

SST

中文名稱

Silicon Storage Technology, Inc官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二

更新時間

2024-12-23 14:50:00

SST28VF040A-200-4I-NH規(guī)格書詳情

PRODUCT DESCRIPTION

The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternative approaches. The SST28SF/VF040A erase and program with a single power supply. The SST28SF/ VF040A conform to JEDEC standard pinouts for byte wide memories and are compatible with existing industry standard flash EEPROM pinouts.

Featuring high performance programming, the SST28SF/VF040A typically Byte-Program in 35 μs. The SST28SF/VF040A typically Sector-Erase in 2 ms. Both Program and Erase times can be optimized using interface features such as Toggle bit or Data# Polling to indicate the completion of the Write cycle. To protect against an inadvertent write, the SST28SF/VF040A have on chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the SST28SF/VF040A are offered with a guaranteed sector endurance of 10,000 cycles. Data retention is rated greater than 100 years.

FEATURES:

? Single Voltage Read and Write Operations

– 5.0V-only for SST28SF040A

– 2.7-3.6V for SST28VF040A

? Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

? Memory Organization: 512K x8

? Sector-Erase Capability: 256 Bytes per Sector

? Low Power Consumption

– Active Current: 15 mA (typical) for 5.0V and

10 mA (typical) for 2.7-3.6V

– Standby Current: 5 μA (typical)

? Fast Sector-Erase/Byte-Program Operation

– Byte-Program Time: 35 μs (typical)

– Sector-Erase Time: 2 ms (typical)

– Complete Memory Rewrite: 20 sec (typical)

? Fast Read Access Time

– 5.0V-only operation: 90 and 120 ns

– 2.7-3.6V operation: 150 and 200 ns

? Latched Address and Data

? Hardware and Software Data Protection

– 7-Read-Cycle-Sequence Software Data

Protection

? End-of-Write Detection

– Toggle Bit

– Data# Polling

? TTL I/O Compatibility

? JEDEC Standard

– Flash EEPROM Pinouts

? Packages Available

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm and 8mm x 20mm)

– 32-pin PDIP

產(chǎn)品屬性

  • 型號:

    SST28VF040A-200-4I-NH

  • 制造商:

    SST

  • 制造商全稱:

    Silicon Storage Technology, Inc

  • 功能描述:

    4 Mbit(512K x8) SuperFlash EEPROM

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