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SST29EE512-70-4C-PHE

512 Kbit (64K x8) Page-Write EEPROM

SST

Silicon Storage Technology, Inc

SST29EE512-70-4C-EH

512Kbit(64Kx8)Page-WriteEEPROM

PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro

SST

Silicon Storage Technology, Inc

SST29EE512-70-4C-EH

512Kbit(64Kx8)Page-WriteEEPROM

SST

Silicon Storage Technology, Inc

SST29EE512-70-4C-EHE

512Kbit(64Kx8)Page-WriteEEPROM

PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro

SST

Silicon Storage Technology, Inc

SST29EE512-70-4C-NH

512Kbit(64Kx8)Page-WriteEEPROM

PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro

SST

Silicon Storage Technology, Inc

SST29EE512-70-4C-NH

512Kbit(64Kx8)Page-WriteEEPROM

SST

Silicon Storage Technology, Inc

SST29EE512-70-4C-NHE

512Kbit(64Kx8)Page-WriteEEPROM

SST

Silicon Storage Technology, Inc

SST29EE512-70-4C-NHE

512Kbit(64Kx8)Page-WriteEEPROM

PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro

SST

Silicon Storage Technology, Inc

SST29EE512-70-4C-PH

512Kbit(64Kx8)Page-WriteEEPROM

SST

Silicon Storage Technology, Inc

SST29EE512-70-4C-PH

512Kbit(64Kx8)Page-WriteEEPROM

PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro

SST

Silicon Storage Technology, Inc

SST29EE512-70-4I-EH

512Kbit(64Kx8)Page-WriteEEPROM

PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro

SST

Silicon Storage Technology, Inc

SST29EE512-70-4I-EH

512Kbit(64Kx8)Page-WriteEEPROM

SST

Silicon Storage Technology, Inc

SST29EE512-70-4I-EHE

512Kbit(64Kx8)Page-WriteEEPROM

SST

Silicon Storage Technology, Inc

SST29EE512-70-4I-EHE

512Kbit(64Kx8)Page-WriteEEPROM

PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro

SST

Silicon Storage Technology, Inc

SST29EE512-70-4I-NH

512Kbit(64Kx8)Page-WriteEEPROM

SST

Silicon Storage Technology, Inc

SST29EE512-70-4I-NH

512Kbit(64Kx8)Page-WriteEEPROM

PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro

SST

Silicon Storage Technology, Inc

SST29EE512-70-4I-NHE

512Kbit(64Kx8)Page-WriteEEPROM

SST

Silicon Storage Technology, Inc

SST29EE512-70-4I-NHE

512Kbit(64Kx8)Page-WriteEEPROM

PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro

SST

Silicon Storage Technology, Inc

SST29EE512-70-4I-PHE

512Kbit(64Kx8)Page-WriteEEPROM

SST

Silicon Storage Technology, Inc

詳細(xì)參數(shù)

  • 型號:

    SST29EE512-70-4C-PHE

  • 功能描述:

    閃存 64K X 8 70ns

  • RoHS:

  • 制造商:

    ON Semiconductor

  • 數(shù)據(jù)總線寬度:

    1 bit

  • 存儲類型:

    Flash

  • 存儲容量:

    2 MB

  • 結(jié)構(gòu):

    256 K x 8

  • 接口類型:

    SPI

  • 電源電壓-最大:

    3.6 V

  • 電源電壓-最小:

    2.3 V

  • 最大工作電流:

    15 mA

  • 工作溫度:

    - 40 C to + 85 C

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝:

    Reel

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
SST
2016+
TSOP
6523
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21+
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5217
原裝現(xiàn)貨假一賠十
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SST
23+
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50000
全新原裝正品現(xiàn)貨,支持訂貨
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SST
23+
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50000
全新原裝正品現(xiàn)貨,支持訂貨
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SST
2022
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80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
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23+
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11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
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SST
10+
TSOP
1070
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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SST
TSOP
399000
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
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SST
589220
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量
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SST
23+
NA/
8467
原廠直銷,現(xiàn)貨供應(yīng),賬期支持!
詢價(jià)
更多SST29EE512-70-4C-PHE供應(yīng)商 更新時(shí)間2025-1-8 17:38:00