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SST34HF1642C-70-4E-LSE中文資料SST數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
廠商型號(hào) |
SST34HF1642C-70-4E-LSE |
功能描述 | 16 Mbit Concurrent SuperFlash 2/4/8 Mbit SRAM ComboMemory |
文件大小 |
488.09 Kbytes |
頁(yè)面數(shù)量 |
38 頁(yè) |
生產(chǎn)廠商 | Silicon Storage Technology, Inc |
企業(yè)簡(jiǎn)稱 |
SST |
中文名稱 | Silicon Storage Technology, Inc官網(wǎng) |
原廠標(biāo)識(shí) | |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2024-11-15 23:00:00 |
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SST34HF1642C-70-4E-LSE規(guī)格書(shū)詳情
PRODUCT DESCRIPTION
The SST34HF16x2C/D/S ComboMemory devices integrate either a 1M x16 or 2M x8 CMOS flash memory bank with either a 128K x16/256K x8, 256K x16/512 x8, or 512K x16/1024K x8 CMOS SRAM or pseudo SRAM (PSRAM) memory bank in a multi-chip package (MCP). These devices are fabricated using SST’s proprietary, high-performance CMOS SuperFlash technology incorporating the split-gate cell design and thick-oxide tunneling injector to attain better reliability and manufacturability compared with alternate approaches. The SST34HF16x2C/D/S devices are ideal for applications such as cellular phones, GPS devices, PDAs, and other portable electronic devices in a low power and small form factor system.
FEATURES:
? Flash Organization: 1M x16 or 2M x8
? Dual-Bank Architecture for Concurrent Read/Write Operation
– 16 Mbit: 4 Mbit + 12 Mbit
? (P)SRAM Organization:
– 2 Mbit: 128K x16 or 256K x8
– 4 Mbit: 256K x16 or 512K x8
– 8 Mbit: 512K x16 or 1024K x8
? Single 2.7-3.3V Read and Write Operations
? Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
? Low Power Consumption:
– Active Current: 25 mA (typical)
– Standby Current: 20 μA (typical)
? Hardware Sector Protection (WP#)
– Protects 4 outer most sectors (4 KWord) in the larger bank by holding WP# low and unprotects by holding WP# high
? Hardware Reset Pin (RST#)
– Resets the internal state machine to reading data array
? Byte Selection for Flash (CIOF pin)
– Selects 8-bit or 16-bit mode
? Sector-Erase Capability
– Uniform 2 KWord sectors
? Block-Erase Capability
– Uniform 32 KWord blocks
? Read Access Time
– Flash: 70 ns
– (P)SRAM: 70 ns
? Erase-Suspend / Erase-Resume Capabilities
? Security ID Feature
– SST: 128 bits
– User: 128 bits
? Latched Address and Data
? Fast Erase and Word-/Byte-Program (typical):
– Sector-Erase Time: 18 ms
– Block-Erase Time: 18 ms
– Chip-Erase Time: 35 ms
– Word-Program Time: 7 μs
? Automatic Write Timing
– Internal VPP Generation
? End-of-Write Detection
– Toggle Bit
– Data# Polling
– Ready/Busy# pin
? CMOS I/O Compatibility
? JEDEC Standard Command Set
? Packages Available
– 56-ball LFBGA (8mm x 10mm)
– 62-ball LFBGA (8mm x 10mm)
產(chǎn)品屬性
- 型號(hào):
SST34HF1642C-70-4E-LSE
- 制造商:
SST
- 制造商全稱:
Silicon Storage Technology, Inc
- 功能描述:
16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
SST |
23+ |
NA/ |
3330 |
原廠直銷,現(xiàn)貨供應(yīng),賬期支持! |
詢價(jià) | ||
SST |
2015+ |
SOP/DIP |
19889 |
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣! |
詢價(jià) | ||
現(xiàn)貨SST |
21+ |
BGA |
2000 |
全新原裝 現(xiàn)貨 價(jià)優(yōu) |
詢價(jià) | ||
SST |
2339+ |
BGA |
6232 |
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存! |
詢價(jià) | ||
SST |
21+ |
BGA |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
SST02 |
02+ |
TSOP |
4 |
普通 |
詢價(jià) | ||
SST |
NA |
8560 |
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨 |
詢價(jià) | |||
SST02 |
23+ |
TSOP |
11200 |
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO |
詢價(jià) | ||
SST |
2022 |
BGA |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價(jià) | ||
SST |
22+ |
BGA |
20000 |
保證原裝正品,假一陪十 |
詢價(jià) |