首頁>SST34HF1682C-70-4E-LPE>規(guī)格書詳情
SST34HF1682C-70-4E-LPE中文資料SST數(shù)據(jù)手冊PDF規(guī)格書
相關(guān)芯片規(guī)格書
更多- SST34HF1681-70-4C-L1P
- SST34HF1681
- SST34HF1681-70-4E-L1P
- SST34HF1682C-70-4C-B1SE
- SST34HF1682C-70-4C-L1PE
- SST34HF1682C-70-4E-L1PE
- SST34HF1682C-70-4C-LSE
- SST34HF1682C-70-4E-L1SE
- SST34HF1682C-70-4C-L1SE
- SST34HF1682C-70-4E-B1SE
- SST34HF164C-70-4E-LBK
- SST34HF164G-70-4C-LBK
- SST34HF1681J-70-4E-L1PE
- SST34HF164G-70-4E-LBK
- SST34HF164G-70-4C-L3KE
- SST34HF1681J
- SST34HF164C-70-4C-LBK
- SST34HF164G-70-4E-L3KE
SST34HF1682C-70-4E-LPE規(guī)格書詳情
PRODUCT DESCRIPTION
The SST34HF16x2C/D/S ComboMemory devices integrate either a 1M x16 or 2M x8 CMOS flash memory bank with either a 128K x16/256K x8, 256K x16/512 x8, or 512K x16/1024K x8 CMOS SRAM or pseudo SRAM (PSRAM) memory bank in a multi-chip package (MCP). These devices are fabricated using SST’s proprietary, high-performance CMOS SuperFlash technology incorporating the split-gate cell design and thick-oxide tunneling injector to attain better reliability and manufacturability compared with alternate approaches. The SST34HF16x2C/D/S devices are ideal for applications such as cellular phones, GPS devices, PDAs, and other portable electronic devices in a low power and small form factor system.
FEATURES:
? Flash Organization: 1M x16 or 2M x8
? Dual-Bank Architecture for Concurrent Read/Write Operation
– 16 Mbit: 4 Mbit + 12 Mbit
? (P)SRAM Organization:
– 2 Mbit: 128K x16 or 256K x8
– 4 Mbit: 256K x16 or 512K x8
– 8 Mbit: 512K x16 or 1024K x8
? Single 2.7-3.3V Read and Write Operations
? Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
? Low Power Consumption:
– Active Current: 25 mA (typical)
– Standby Current: 20 μA (typical)
? Hardware Sector Protection (WP#)
– Protects 4 outer most sectors (4 KWord) in the larger bank by holding WP# low and unprotects by holding WP# high
? Hardware Reset Pin (RST#)
– Resets the internal state machine to reading data array
? Byte Selection for Flash (CIOF pin)
– Selects 8-bit or 16-bit mode
? Sector-Erase Capability
– Uniform 2 KWord sectors
? Block-Erase Capability
– Uniform 32 KWord blocks
? Read Access Time
– Flash: 70 ns
– (P)SRAM: 70 ns
? Erase-Suspend / Erase-Resume Capabilities
? Security ID Feature
– SST: 128 bits
– User: 128 bits
? Latched Address and Data
? Fast Erase and Word-/Byte-Program (typical):
– Sector-Erase Time: 18 ms
– Block-Erase Time: 18 ms
– Chip-Erase Time: 35 ms
– Word-Program Time: 7 μs
? Automatic Write Timing
– Internal VPP Generation
? End-of-Write Detection
– Toggle Bit
– Data# Polling
– Ready/Busy# pin
? CMOS I/O Compatibility
? JEDEC Standard Command Set
? Packages Available
– 56-ball LFBGA (8mm x 10mm)
– 62-ball LFBGA (8mm x 10mm)
產(chǎn)品屬性
- 型號:
SST34HF1682C-70-4E-LPE
- 制造商:
SST
- 制造商全稱:
Silicon Storage Technology, Inc
- 功能描述:
16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
SST |
23+ |
BGA |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
SST |
22+ |
BGA |
2000 |
原廠原包裝。假一罰十,實單可談。 |
詢價 | ||
SST |
2021+ |
SMD |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
SST |
24+ |
BGA |
4500 |
原裝正品!公司現(xiàn)貨!歡迎來電! |
詢價 | ||
SST |
22+23+ |
BGA |
45113 |
絕對原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨 |
詢價 | ||
SST |
BGA56 |
893993 |
集團(tuán)化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | |||
SST |
589220 |
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量 |
詢價 | ||||
SST |
23+ |
BGA |
3000 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售! |
詢價 | ||
SST |
1726+ |
BGA |
6528 |
只做進(jìn)口原裝正品現(xiàn)貨,假一賠十! |
詢價 | ||
SST |
新年份 |
BGA |
3500 |
絕對全新原裝現(xiàn)貨,歡迎來電查詢 |
詢價 |