SST36VF1601中文資料SST數(shù)據(jù)手冊(cè)PDF規(guī)格書

PRODUCT DESCRIPTION

The SST36VF1601/1602 are 1M x16 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.The SST36VF1601/ 1602 write (Program or Erase) with a 2.7-3.6V power supply. The SST36VF1601/1602 devices conform to JEDEC standard pinouts for x16 memories.

FEATURES:

? Organized as 1M x16

? Dual-Bank Architecture for Concurrent

Read/Write Operation

– 16 Mbit Bottom Sector Protection

- SST36VF1601: 12 Mbit + 4 Mbit

– 16 Mbit Top Sector Protection

- SST36VF1602: 4 Mbit + 12 Mbit

? Single 2.7-3.6V Read and Write Operations

? Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

? Low Power Consumption:

– Active Current: 25 mA (typical)

– Standby Current: 4 μA (typical)

– Auto Low Power Mode: 4 μA (typical)

? Hardware Sector Protection/WP# Input Pin

– Protects 4 outer most sectors (4 KWord) in the

larger bank by driving WP# low and unprotects

by driving WP# high

? Hardware Reset Pin (RESET#)

– Resets the internal state machine to reading

data array

? Sector-Erase Capability

– Uniform 1 KWord sectors

? Block-Erase Capability

– Uniform 32 KWord blocks

? Read Access Time

– 70 and 90 ns

? Latched Address and Data

? Fast Erase and Word-Program:

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Word-Program Time: 14 μs (typical)

– Chip Rewrite Time: 8 seconds (typical)

? Automatic Write Timing

– Internal VPP Generation

? End-of-Write Detection

– Toggle Bit

– Data# Polling

– Ready/Busy# pin

? CMOS I/O Compatibility

? Conforms to Common Flash Memory

Interface (CFI)

? JEDEC Standards

– Flash EEPROM Pinouts and command sets

? Packages Available

– 48-Pin TSOP (12mm x 20mm)

– 48-Ball TFBGA (8mm x 10mm)