SST39SF040-70-4I-NHE集成電路（IC）的存儲器規(guī)格書PDF中文資料

SST39SF040-70-4I-NHE屬于集成電路（IC）的存儲器。由微芯科技股份有限公司制造生產(chǎn)的SST39SF040-70-4I-NHE存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Product Description

The SST39SF010A/020A/040 are CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF010A/020A/040 devices write (Program or Erase) with a 4.5-5.5V power supply. The SST39SF010A/020A/040 devices conform to JEDEC standard pinouts for x8 memories.

Features

? Organized as 128K x8 / 256K x8 / 512K x8

? Single 4.5-5.5V Read and Write Operations

? Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

? Low Power Consumption (typical values at 14 MHz)

– Active Current: 10 mA (typical)

– Standby Current: 30 μA (typical)

? Sector-Erase Capability

– Uniform 4 KByte sectors

? Fast Read Access Time:

– 55 ns

– 70 ns

? Latched Address and Data

? Automatic Write Timing

– Internal VPP Generation

? Fast Erase and Byte-Program

– Sector-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Byte-Program Time: 14 μs (typical)

– Chip Rewrite Time:

2 seconds (typical) for SST39SF010A

4 seconds (typical) for SST39SF020A

8 seconds (typical) for SST39SF040

? End-of-Write Detection

– Toggle Bit

– Data# Polling

? TTL I/O Compatibility

? JEDEC Standard

– Flash EEPROM Pinouts and command sets

? Packages Available

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm)

– 32-pin PDIP

? All devices are RoHS compliant