SST39VF016-70-4I-B3K中文資料SST數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

PRODUCT DESCRIPTION

The SST39LF/VF080 and SST39LF/VF016 devices are 1M x8 / 2M x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF080/016 write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF080/016 write (Program or Erase) with a 2.7-3.6V power supply. They conform to JEDEC standard pinouts for x8 memories.

FEATURES:

? Organized as 1M x8 / 2M x8

? Single Voltage Read and Write Operations

– 3.0-3.6V for SST39LF080/016

– 2.7-3.6V for SST39VF080/016

? Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

? Low Power Consumption:

– Active Current: 15 mA (typical)

– Standby Current: 4 μA (typical)

– Auto Low Power Mode: 4 μA (typical)

? Sector-Erase Capability

– Uniform 4 KByte sectors

? Block-Erase Capability

– Uniform 64 KByte blocks

? Fast Read Access Time:

– 55 ns for SST39LF080/016

– 70 and 90 ns for SST39VF080/016

? Latched Address and Data

? Fast Erase and Byte-Program:

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Byte-Program Time: 14 μs (typical)

– Chip Rewrite Time:

15 seconds (typical) for SST39LF/VF080

30 seconds (typical) for SST39LF/VF016

? Automatic Write Timing

– Internal VPP Generation

? End-of-Write Detection

– Toggle Bit

– Data# Polling

? CMOS I/O Compatibility

? JEDEC Standard

– Flash EEPROM Pinouts and command sets

? Packages Available

– 40-lead TSOP (10mm x 20mm)

– 48-ball TFBGA (6mm x 8mm)