SST39VF160集成電路（IC）的存儲器規(guī)格書PDF中文資料

PRODUCT DESCRIPTION

The SST39VF160Q/VF160 devices are 1M x 16 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF160Q/VF160 write (Program or Erase) with a 2.7V-only power supply. The SST39VF160Q/VF160 conform to JEDEC standard pinouts for x16 memories.

FEATURES:

? Organized as 1 M X 16

? Single 2.7V-only Read and Write Operations

? VDDQ Power Supply to Support 5V I/O for SST39VF160Q

- VDDQ not available on SST39VF160

? Superior Reliability

- Endurance: 100,000 Cycles (typical)

- Greater than 100 years Data Retention

? Low Power Consumption:

- Active Current: 15 mA (typical)

- Standby Current: 3 μA (typical)

- Auto Low Power Mode: 3 μA (typical)

? Small Sector Erase Capability (512 sectors)

- Uniform 2 KWord sectors

? Block Erase Capability (32 blocks)

- Uniform 32 KWord blocks

? Fast Read Access Time:

- 70 and 90 ns

? Latched Address and Data

? Fast Sector Erase and Word Program:

- Sector Erase Time: 3 ms typical

- Block Erase Time: 7 ms typical

- Chip Erase Time: 15 ms typical

- Word Program time: 7 μs typical

- Chip Rewrite Time: 7 seconds

? Automatic Write Timing

- Internal Vpp Generation

? End of Write Detection

- Toggle Bit

- Data# Polling

? CMOS I/O Compatibility

? JEDEC Standard

- EEPROM Pinouts and command set

? Packages Available

- 48-Pin TSOP (12mm x 20mm)

- 6 x 8 Ball TFBGA