SST39VF1602-90-4I-B3KE中文資料SST數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

PRODUCT DESCRIPTION

The SST39VF160x and SST39VF320x devices are 1M x16 and 2M x16, respectively, CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF160x/320x write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x16 memories.

Featuring high performance Word-Program, the SST39VF160x/320x devices provide a typical Word-Program time of 7 μsec. These devices use Toggle Bit or Data# Polling to indicate the completion of Program operation. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at greater than 100 years.

FEATURES:

? Organized as

1M x16: SST39VF1601/1602

2M x16: SST39VF3201/3202

? Single Voltage Read and Write Operations

– 2.7-3.6V

? Superior Reliability

– Endurance: 100,000 Cycles (Typical)

– Greater than 100 years Data Retention

? Low Power Consumption (typical values at 5 MHz)

– Active Current: 9 mA (typical)

– Standby Current: 3 μA (typical)

– Auto Low Power Mode: 3 μA (typical)

? Hardware Block-Protection/WP# Input Pin

– Top Block-Protection (top 32 KWord)

for SST39VF1602/3202

– Bottom Block-Protection (bottom 32 KWord)

for SST39VF1601/3201

? Sector-Erase Capability

– Uniform 2 KWord sectors

? Block-Erase Capability

– Uniform 32 KWord blocks

? Chip-Erase Capability

? Erase-Suspend/Erase-Resume Capabilities

? Hardware Reset Pin (RST#)

? Security-ID Feature

– SST: 128 bits; User: 128 bits

? Fast Read Access Time:

– 70 ns

? Latched Address and Data

? Fast Erase and Word-Program:

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 40 ms (typical)

– Word-Program Time: 7 μs (typical)

? Automatic Write Timing

– Internal VPP Generation

? End-of-Write Detection

– Toggle Bits

– Data# Polling

? CMOS I/O Compatibility

? JEDEC Standard

– Flash EEPROM Pinouts and command sets

? Packages Available

– 48-lead TSOP (12mm x 20mm)

– 48-ball TFBGA (6mm x 8mm)

? All non-Pb (lead-free) devices are RoHS compliant