SST39VF3201C集成電路（IC）的存儲器規(guī)格書PDF中文資料

SST39VF3201C屬于集成電路（IC）的存儲器。由微芯科技股份有限公司制造生產(chǎn)的SST39VF3201C存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Features

? Organized as 2M x16

? Single Voltage Read and Write Operations:

- 2.7V-3.6V

? Superior Reliability:

- Endurance: 100,000 Cycles (Typical)

- Greater than 100 years Data Retention

? Low-Power Consumption (typical values at

5 MHz):

- Active Current: 6 mA (typical)

- Standby Current: 4 μA (typical)

- Auto Low-Power Mode: 4 μA (typical)

? Hardware Block Protection/WP# Input Pin:

- Top Block Protection (top two 4-KWord

blocks)

for SST39VF3202C

- Bottom Block-Protection (bottom two 4-

KWord blocks) for SST39VF3201C

? Sector-Erase Capability:

- Uniform 2 KWord sectors

? Block-Erase Capability:

- Flexible block architecture

- Eight 4-KWord blocks, 63 32-KWord blocks

? Chip-Erase Capability

? Erase-Suspend/Erase-Resume Capabilities

? Hardware Reset Pin (RST#)

? Security-ID Feature:

- Microchip: 128 bits; User: 128 words

? Fast Read Access Time:

- 70 ns

? Latched Address and Data

? Fast Erase and Word-Program:

- Sector-Erase Time: 18 ms (typical)

- Block-Erase Time: 18 ms (typical)

- Chip-Erase Time: 35 ms (typical)

- Word-Program Time: 7 μs (typical)

? Automatic Write Timing:

- Internal VPP Generation

? End-of-Write Detection:

- Toggle Bits

- Data# Polling

- RY/BY# Pin

? CMOS I/O Compatibility

? JEDEC Standard:

- Flash EEPROM Pin Assignments

? Packages Available:

- 48-lead TSOP (12 mm x 20 mm)

- 48-ball TFBGA (6 mm x 8 mm)

? All devices are RoHS compliant