SST39VF6402B-70-4I-B1KE集成電路（IC）的存儲器規(guī)格書PDF中文資料

SST39VF6402B-70-4I-B1KE屬于集成電路（IC）的存儲器。由微芯科技股份有限公司制造生產(chǎn)的SST39VF6402B-70-4I-B1KE存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Features

? Organized as 4M x16

? Single Voltage Read and Write Operations

– 2.7-3.6V

? Superior Reliability

– Endurance: 100,000 Cycles (Typical)

– Greater than 100 years Data Retention

? Low Power Consumption (typical values at 5 MHz)

– Active Current: 9 mA (typical)

– Standby Current: 3 μA (typical)

– Auto Low Power Mode: 3 μA (typical)

? Hardware Block-Protection/WP# Input Pin

– Top Block-Protection (top 32 KWord)

for SST39VF6402B

– Bottom Block-Protection (bottom 32 KWord)

for SST39VF6401B

? Sector-Erase Capability

– Uniform 2 KWord sectors

? Block-Erase Capability

– Uniform 32 KWord blocks

? Chip-Erase Capability

? Erase-Suspend/Erase-Resume Capabilities

? Hardware Reset Pin (RST#)

? Security-ID Feature

– Microchip: 128 bits; User: 128 bits

? Fast Read Access Time:

– 70 ns

? Latched Address and Data

? Fast Erase and Word-Program:

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 40 ms (typical)

– Word-Program Time: 7 μs (typical)

? Automatic Write Timing

– Internal VPP Generation

? End-of-Write Detection

– Toggle Bits

– Data# Polling

? CMOS I/O Compatibility

? JEDEC Standard

– Flash EEPROM Pin Assignments

– Software command sequence compatibility

- Address format is 11 bits, A10-A0

- Block-Erase 6th Bus Write Cycle is 30H

- Sector-Erase 6th Bus Write Cycle is 50H

? Packages Available

– 48-lead TSOP (12mm x 20mm)

– 48-ball TFBGA (8mm x 10mm)

? All devices are RoHS compliant