SST39VF800A-70-4I-B3KE集成電路（IC）的存儲(chǔ)器規(guī)格書(shū)PDF中文資料

PRODUCT DESCRIPTION

The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF200A/400A/800A write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF200A/400A/800A write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x16 memories.

FEATURES:

? Organized as 128K x16 / 256K x16 / 512K x16

? Single Voltage Read and Write Operations

– 3.0-3.6V for SST39LF200A/400A/800A

– 2.7-3.6V for SST39VF200A/400A/800A

? Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

? Low Power Consumption(typical values at 14 MHz)

– Active Current: 9 mA (typical)

– Standby Current: 3 μA (typical)

? Sector-Erase Capability

– Uniform 2 KWord sectors

? Block-Erase Capability

– Uniform 32 KWord blocks

? Fast Read Access Time

– 45 and 55 ns for SST39LF200A

– 55 ns for SST39LF400A/800A

– 70 ns for SST39VF200A/400A/800A

? Latched Address and Data

? Fast Erase and Word-Program

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Word-Program Time: 14 μs (typical)

– Chip Rewrite Time:

2 seconds (typical) for SST39LF/VF200A

4 seconds (typical) for SST39LF/VF400A

8 seconds (typical) for SST39LF/VF800A

? Automatic Write Timing

– Internal VPP Generation

? End-of-Write Detection

– Toggle Bit

– Data# Polling

? CMOS I/O Compatibility

? JEDEC Standard

– Flash EEPROM Pinouts and command sets

? Packages Available

– 48-lead TSOP (12mm x 20mm)

– 48-ball TFBGA (6mm x 8mm)

– 48-ball WFBGA (4mm x 6mm)

– 48-bump XFLGA (4mm x 6mm) for 4M and 8M

? All non-Pb (lead-free) devices are RoHS compliant