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STGB10N60L

N-CHANNEL10A-600VD2PAKLOGICLEVELIGBT

N-CHANNEL10A-600VD2PAKLOGICLEVELIGBT ■HIGHINPUTIMPEDANCE(VOLTAGEDRIVEN) ■VERYLOWON-VOLTAGEDROP(Vcesat) ■LOWTHRESHOLDVOLTAGE(LOGICLEVELINPUT) ■HIGHCURRENTCAPABILITY ■OFFLOSSESINCLUDETAILCURRENT ■SURFACE-MOUNTINGD2PAK(TO-263)POWERPACKAGEINTUBE(NOSUFFIX)

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGP10N60

N-CHANNEL10A-600VTO-220LOGICLEVELIGBT

N-CHANNEL10A-600VTO-220LOGICLEVELIGBT ■HIGHINPUTIMPEDANCE(VOLTAGEDRIVEN) ■VERYLOWON-VOLTAGEDROP(Vcesat) ■LOWTHRESHOLDVOLTAGE(LOGICLEVELINPUT) ■HIGHCURRENTCAPABILITY ■OFFLOSSESINCLUDETAILCURRENT APPLICATIONS ■ELECTRONICIGNITION ■LIGHTDIMMER ■STATICRELAY

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGP10N60L

N-CHANNEL10A-600VTO-220LOGICLEVELIGBT

N-CHANNEL10A-600VTO-220LOGICLEVELIGBT ■HIGHINPUTIMPEDANCE(VOLTAGEDRIVEN) ■VERYLOWON-VOLTAGEDROP(Vcesat) ■LOWTHRESHOLDVOLTAGE(LOGICLEVELINPUT) ■HIGHCURRENTCAPABILITY ■OFFLOSSESINCLUDETAILCURRENT APPLICATIONS ■ELECTRONICIGNITION ■LIGHTDIMMER ■STATICRELAY

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

SVF10N60AT

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

SVF10N60T

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

SVFP10N60CAFJ

10A,600VN-CHANNELMOSFET

GENERALDESCRIPTION SVFP10N60CAFJ/FJHisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMhigh-voltageplanarVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistan

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVFP10N60CAFJ

10A,600VN-CHANNELMOSFET

GENERALDESCRIPTION SVFP10N60CAFJ/FJHisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMhigh-voltageplanarVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistan

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVFP10N60CAFJ

10A,600VN-CHANNELMOSFET

GENERALDESCRIPTION SVFP10N60CAFJ/FJHisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMhigh-voltageplanarVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistan

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVFP10N60CAFJ

10A,600VN-CHANNELMOSFET

GENERALDESCRIPTION SVFP10N60CAFJ/FJHisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMhigh-voltageplanarVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistan

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVFP10N60CAFJH

10A,600VN-CHANNELMOSFET

GENERALDESCRIPTION SVFP10N60CAFJ/FJHisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMhigh-voltageplanarVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistan

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

詳細(xì)參數(shù)

  • 型號：

    SSW10N60BTM

  • 功能描述：

    MOSFET N-CH/600V/7A/1.2OHM

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

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更多SSW10N60BTM供應(yīng)商 更新時間2025-3-21 14:16:00

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