首頁 >ST2SB1424U>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
ST2SB1424U | PNP Silicon Epitaxial Planar Transistor PNPSiliconEpitaxialPlanarTransistor | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半導體先之科半導體科技(東莞)有限公司 | SEMTECH_ELEC | |
TRANSISTOR(PNP) FEATURES Powerdissipation PCM:600mW(Tamb=25℃) Collectorcurrent ICM:-3A Collector-basevoltage V(BR)CBO:-20V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳實業(yè)深圳市永而佳實業(yè)有限公司 | WINNERJOIN | ||
Plastic-EncapsulateTransistors FEATURES ?LowVCE(SAT)=-0.2V(Typ.)(IC/IB=-2A/-0.1mA). ?ExcellentDCcurrentgaincharacterisitics. ?Complementarythe2SD2150. | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰電子有限公司 | HOTTECH | ||
SiliconPNPtransistorinaSOT-89PlasticPackage Descriptions SiliconPNPtransistorinaSOT-89PlasticPackage. Features LowVCE(sat),excellentDCcurrentgaincharacteristics. Applications Generalpurposeamplifier. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍箭電子佛山市藍箭電子股份有限公司 | FOSHAN | ||
LowVCE(sat)Transistor(??0V,??A) Features 1)LowVCE(sat). VCE(sat)=?0.2V(Typ.) (IC/IB=?2A/?0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2150/2SC4115S. Structure Epitaxialplanartype PNPsilicontransistor | ROHMRohm 羅姆羅姆半導體集團 | ROHM | ||
LowVCE(SAT)0.2V(Typ.)(IC/IB=-2A/-0.1mA). FEATURES ?LowVCE(SAT)=-0.2V(Typ.)(IC/IB=-2A/-0.1mA). ?ExcellentDCcurrentgaincharacterisitics. ?Complementarythe2SD2150. | MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED 美科半導體美科半導體股份(香港)有限公司 | MAKOSEMI | ||
LowVCE(sat)Transistor FEATURES ●LowVCE(SAT)=-0.2V(Typ.) (IC/IB=-2A/-0.1mA). ●ExcellentDCcurrentgaincharacterisitics. ●Complementarythe2SD2150. APPLICATIONS ●Thisdeviceisdesignedasageneralpurposeamplifier andswitching. | BILINChangzhou Galaxy Century Microelectronics Co.,Ltd. 銀河微電常州銀河世紀微電子股份有限公司 | BILIN | ||
SOT-89-3LPlastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●ExcellentDCcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementthe2SD2150 | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長電科技江蘇長電科技股份有限公司 | JIANGSU | ||
SOT-89-3LPlastic-EncapsulatePNPTransistors FEATURES ●ExcellentDCcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementthe2SD2150 | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 魯光電子深圳市魯光電子科技有限公司 | LUGUANG | ||
LOWVCE(SAT)TRANSISTOR LOWVCE(SAT)TRANSISTOR DESCRIPTION AstheUTCPNPsilicontransistor,the2SB1424istheepitaxialplanartypetransistorwhichhasverylowVCE(SAT)(Collector-emittersaturationvoltage). FEATURES *VerygoodDCcurrentgain *VerylowVCE(SAT)=-0.2V@IC/IB=(-2A)/(-0.1A) | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
TRANSISTOR(PNP) FEATURES ●ExcellentDCCurrentGain ●LowCollector-emittersaturationvoltage ●Complementthe2SD2150 | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金譽半導體深圳市金譽半導體股份有限公司 | HTSEMI | ||
PNPSiliconMediumPowerTransistor FEATURES Powerdissipation PCM:600mWTemp.=25°C Collectorcurrent ICM:-3A Collector-basevoltage V(BR)CBO:-20V Operatingandstoragejunctiontemperaturerange TJTstg:-55°Cto+150°C | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
LowVCE(sat)Transistor ■Features ●ExcellentDCcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementaryto2SD2150 | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN | ||
Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES Powerdissipation PCM:600mW(Tamb=25℃) Collectorcurrent ICM:-3A Collector-basevoltage V(BR)CBO:-20V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited | TEL | ||
LowVCE(sat)Transistor(−20V,−3A) | ROHMRohm 羅姆羅姆半導體集團 | ROHM | ||
EpitaxialPlanarPNPTransistors EpitaxialPlanarPNPTransistors P/bLead(Pb)-Free | WEITRON Weitron Technology | WEITRON | ||
LowVce(sat)Transistor(-20V,-3A) Features 1)LowVCE(sat).VCE(sat)=-0.2V(Typ.)(IC/IB=-2A/-0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2150/2SC4115S. | ROHMRohm 羅姆羅姆半導體集團 | ROHM | ||
PNPTransistors ■Features ●ExcellentDCcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementaryto2SD2150 | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑風微電子廣東佑風微電子有限公司 | YFWDIODE | ||
LowVCE(sat)Transistor(-20V,-3A) FEATURES LowVCE(SAT)=-0.2V(Typ.) (IC/IB=-2A/-0.1mA). ExcellentDCcurrentgaincharacterisitics. Complementarythe2SD2150. APPLICATIONS Thisdeviceisdesignedasageneralpurposeamplifier andswitching. | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ | ||
PNPTransistors | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN |
詳細參數(shù)
- 型號:
ST2SB1424U
- 制造商:
SEMTECH_ELEC
- 制造商全稱:
SEMTECH ELECTRONICS LTD.
- 功能描述:
PNP Silicon Epitaxial Planar Transistor
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ST |
23+ |
SOT89 |
16900 |
正規(guī)渠道,只有原裝! |
詢價 | ||
ST |
SOT89 |
36900 |
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | |||
ST |
22+ |
SOT89 |
16900 |
支持樣品 原裝現(xiàn)貨 提供技術(shù)支持! |
詢價 | ||
ST |
03+ |
SOT-23 |
3000 |
庫存剛更新加微13425146986 |
詢價 | ||
ST |
2023+ |
SOT-23 |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
ST |
24+ |
SOT-23 |
35200 |
一級代理/放心采購 |
詢價 | ||
ECB |
13+ |
TO-92 |
53400 |
詢價 | |||
ECB |
23+ |
TO-92 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
ECB |
23+ |
TO-92 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
ECB |
24+ |
TO-92 |
160200 |
原裝現(xiàn)貨假一賠十 |
詢價 |
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